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参数资料
| 型号： | IDT08S60C |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | 2nd Generation thinQ! SiC Schottky Diode |
| 中文描述： | 第二代thinQ！碳化硅肖特基二极管 |
| 文件页数： | 2/7页 |
| 文件大小： | 240K |
| 代理商： | IDT08S60C |
IDT08S60C
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
-
-
2
K/W
Thermal resistance,
junction - ambient
R
thJA
leaded
-
-
62
Soldering temperature,
wavesoldering only allowed at leads
T
sold
1.6mm ( 0.063in.) from
case for 10s
-
-
260
°C
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
DC blocking voltage
V
DC
I
R
=0.1 mA
600
-
-
V
Diode forward voltage
V
F
I
F
=8 A,
T
j
=25 °C
-
1.5
1.7
I
F
=8 A,
T
j
=150 °C
-
1.7
2.1
Reverse current
I
R
V
R
=600 V,
T
j
=25 °C
-
1
100
μA
V
R
=600 V,
T
j
=150 °C
-
4
1000
AC characteristics
Total capacitive charge
Q
c
-
19
-
nC
Switching time
3)
t
c
-
-
<10
ns
Total capacitance
C
V
R
=1 V,
f
=1 MHz
-
310
-
pF
V
R
=300 V,
f
=1 MHz
-
50
-
V
R
=600 V,
f
=1 MHz
-
50
-
1)
J-STD20 and JESD22
4)
Only capacitive charge occuring, guaranteed by design
2)
All devices tested under avalanche conditions, for a time periode of 5ms, at 5 mA.
Values
V
R
=400 V,
I
F
≤
I
F,max
,
d
i
F
/d
t
=200 A/μs,
T
j
=150 °C
3)
t
c
is the time constant for the capacitive displacement current waveform (independent from T
j
, I
LOAD
and
di/dt), different from t
rr
which is dependent on T
j
, I
LOAD
and di/dt. No reverse recovery time constant t
rr
due to
absence of minority carrier injection.
Rev. 2.0
page 2
2006-03-14
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相关代理商/技术参数 |
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