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参数资料
| 型号： | IDT6116SA25TPGI |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 2/11页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 16KBIT 25NS 24DIP |
| 标准包装： | 15 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 异步 |
| 存储容量： | 16K (2K x 8) |
| 速度： | 25ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 24-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 24-PDIP |
| 包装： | 管件 |
| 其它名称： | 6116SA25TPGI |
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit)
Pin Configurations
Military, Commercial, and Industrial Temperature Ranges
Capacitance (T A = +25°C, f = 1.0 MH Z )
A 7
A 6
1
2
24
23
V CC
A 8
Symbol
C IN
Parameter (1)
Input Capacitance
Conditions
V IN = 0V
Max.
8
Unit
pF
A 5
A 4
A 3
A 2
A 1
A 0
I/O 0
3
4
5
6
7
8
9
P24-2
P24-1
D24-2
D24-1
SO24-2
SO24-4
22
21
20
19
18
17
16
A 9
WE
OE
A 10
CS
I/O 7
I/O 6
C I/O I/O Capacitance V OUT = 0V 8 pF
3089 tbl 03
NOTE:
1. This parameter is determined by device characterization, but is not production
tested.
I/O 1
I/O 2
GND
10
11
12
15
14
13
I/O 5
I/O 4
I/O 3
3089 drw 02
,
Absolute Maximum Ratings (1)
V TERM
DIP/SOIC
Top View
Symbol
(2)
Rating
Terminal Voltage
with Respect
to GND
Com'l.
-0.5 to +7.0
Mil.
-0.5 to +7.0
Unit
V
Pin Description
Name
A 0 - A 10
Description
Address Inputs
T A
T BIAS
T STG
Operating
Temperature
Temperature
Under Bias
Storage Temperature
0 to +70
-55 to +125
-55 to +125
-55 to +125
-65 to +135
-65 to +150
o
o
o
C
C
C
I/O 0 - I/O 7
CS
Data Input/Output
Chip Select
P T
I OUT
Power Dissipation
DC Output Current
1.0
50
1.0
50
W
mA
WE
Write Enable
NOTES:
3089 tbl 04
OE
V CC
Output Enable
Power
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure
GND
Ground
3089 tbl 01
to absolute maximum rating conditions for extended periods may affect
reliability.
2. V TERM must not exceed V CC +0.5V.
Truth Table (1)
Standby
Read
Read
Write
Mode
CS
H
L
L
L
OE
X
L
H
X
WE
X
H
H
L
I/O
High-Z
DATA OUT
High-Z
DATA IN
NOTE:
3089 tbl 02
1. H = V IH , L = V IL , X = Don't Care.
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT6116SA25TPI | 功能描述:IC SRAM 16KBIT 25NS 24DIP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步，DDR II 存储容量:18M（1M x 18） 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA（13x15） 包装:托盘 其它名称:71P71804S200BQ |
| IDT6116SA25Y | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (2K x 8 BIT) |
| IDT6116SA25YB | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (2K x 8 BIT) |
| IDT6116SA25YI | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:CMOS STATIC RAM 16K (2K x 8 BIT) |
| IDT6116SA30D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 SRAM |
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