参数资料
型号: IDT7006L15PFG8
厂商: IDT, Integrated Device Technology Inc
文件页数: 4/20页
文件大小: 0K
描述: IC SRAM 128KBIT 15NS 64TQFP
标准包装: 750
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,异步
存储容量: 128K (16K x 8)
速度: 15ns
接口: 并联
电源电压: 4.5 V ~ 5.5 V
工作温度: 0°C ~ 70°C
封装/外壳: 64-LQFP
供应商设备封装: 64-TQFP(14x14)
包装: 带卷 (TR)
其它名称: 7006L15PFG8
IDT7006S/L
High-Speed 16K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Truth Table I: Non-Contention Read/Write Control
Inputs (1)
Outputs
CE
H
L
L
X
R/ W
X
L
H
X
OE
X
X
L
H
SEM
H
H
H
X
I/O 0-7
High-Z
DATA IN
DATA OUT
High-Z
Deselected: Power-Down
Write to Memory
Read Memory
Outputs Disabled
Mode
NOTE:
1. A 0L – A 13L is not equal to A 0R – A 13R
Truth Table II: Semaphore Read/Write Control (1)
2739 tbl 02
Inputs (1)
Outputs
CE
H
H
L
R/ W
H
X
OE
L
X
X
SEM
L
L
L
I/O 0-7
DATA OUT
DATA IN
____
Read in Semaphore Flag Data Out
Write I/Oo into Semaphore Flag
Not Allowed
Mode
NOTE:
1. There are eight semaphore flags written to via I/O 0 and read from I/O 0 - I/O 7 . These eight semaphores are addressed by A 0 - A 2 .
2739 tbl 03
Absolute Maximum Ratings (1)
Symbol Rating Commercial Military
& Industrial
Unit
Recommended DC Operating
Conditions
V TERM (2)
Terminal Voltage
with Respect
-0.5 to +7.0
-0.5 to +7.0
V
Symbol
V CC
Parameter
Supply Voltage
Min.
4.5
Typ.
5.0
Max.
5.5
Unit
V
to GND
GND
Ground
0
0
0
V
6.0
-0.5
T BIAS
T STG
Temperature
Under Bias
Storage
-55 to +125
-65 to +150
-65 to +135
-65 to +150
o
o
C
C
V IH
V IL
Input High Voltage
Input Low Voltage
2.2
(1)
____
____
(2)
0.8
V
V
Temperature
NOTES:
2739 tbl 06
I OUT
DC Output
50
50
mA
1. V IL > -1.5V for pulse width less than 10ns.
NOTES:
Current
2739 tbl 04
2. V TERM must not exceed Vcc + 10%.
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sec-tions of this specification is not implied. Exposure
to absolute maxi-mum rating conditions for extended periods may affect
reliability.
2. V TERM must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns
Maximum Operating Temperature
and Supply Voltage (1)
Ambient
Grade Temperature GND Vcc
-55 C to+125 C
maximum, and is limited to < 20mA for the period of V TERM < Vcc   + 10%.
Military
O O
0V
5.0V + 10%
0 C to +70 C
40 C to +85 C
Capacitance (1) (T A =+25°C,f=1.0mhz)
Symbol Parameter Conditions (2) Max.
Unit
Commercial
Industrial
O O
O O
0V
0V
5.0V + 10%
5.0V + 10%
NOTES:
C IN
C OUT
Input Capacitance
Output
V IN = 3dV
V OUT = 3dV
9
10
pF
pF
2739 tbl 07
1. This is the parameter T A . This is the "instant on" case temperature.
Capacitance
NOTES:
2739 tbl 05
1. These parameters are determined by device characterization, but are not
production tested (TQFP Package Only).
2. 3dV references the interpolated capacitance when the input and output signals
switch from 0V to 3V or from 3V to 0V.
4
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