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参数资料
| 型号： | IDT7006S55PF |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 13/20页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 128KBIT 55NS 64TQFP |
| 标准包装： | 45 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 128K (16K x 8) |
| 速度： | 55ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 64-LQFP |
| 供应商设备封装： | 64-TQFP（14x14） |
| 包装： | 托盘 |
| 其它名称： | 7006S55PF |
IDT7006S/L
High-Speed 16K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Timing Waveform of Write with Port-to-Port Read and BUSY (2,5) (M/ S = V IH ) (4)
t WC
ADDR "A"
MATCH
t WP
R/ W "A"
t APS
DATA IN "A"
(1)
t DW
VALID
t DH
ADDR "B"
MATCH
BUSY "B"
t WDD
DATA OUT "B"
t DDD (3)
NOTES:
1. To ensure that the earlier of the two ports wins. t APS is ignored for M/S = V IL (SLAVE).
2. CE L = CE R = V IL
3. OE = V IL for the reading port.
4. If M/ S = V IL (slave) then BUSY is input ( BUSY "A" = V IH ) and BUSY "B" = "don't care", for this example.
5. All timing is the same for left and right port. Port "A' may be either left or right port. Port "B" is the port opposite from Port "A".
Timing Waveform of Write with BUSY
t WP
R/ W "A"
t WB (3)
t BDA
t BDD
VALID
2739 drw 13
BUSY "B"
R/ W "B"
(2)
t WH (1)
2739 drw 14
NOTES:
1. t WH must be met for both BUSY input (slave) and output (master).
2. BUSY is asserted on Port "B", blocking R/ W "B" , until BUSY "B" goes HIGH.
3. t WB is only for the 'Slave' Version .
13
6.42
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相关代理商/技术参数 |
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|---|---|
| IDT7006S55PF8 | 功能描述:IC SRAM 128KBIT 55NS 64TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M（256K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:71V67703S75PFGI |
| IDT7006S55PFB | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM |
| IDT7006S55PFI | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 Dual-Port SRAM |
| IDT7006S55XL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 Dual-Port SRAM |
| IDT7006S55XLB | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 Dual-Port SRAM |
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