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| 型号： | IDT7007S20PF8 |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 5/21页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 256KBIT 20NS 80TQFP |
| 标准包装： | 750 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 256K (32K x 8) |
| 速度： | 20ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 80-LQFP |
| 供应商设备封装： | 80-TQFP（14x14） |
| 包装： | 带卷 (TR) |
| 其它名称： | 7007S20PF8 |
IDT7007S/L
High-Speed 32K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
Truth Table I: Non-Contention Read/Write Control
Inputs (1)
Outputs
CE
H
L
L
X
R/ W
X
L
H
X
OE
X
X
L
H
SEM
H
H
H
X
I/O 0-7
High-Z
DATA IN
DATA OUT
High-Z
Deselected: Power-Down
Write to Memory
Read Memory
Outputs Disabled
Mode
NOTE:
1. A 0L — A 14L ≠ A 0R — A 14R
Truth Table II: Semaphore Read/Write Control (1)
2940 tbl 02
Inputs
Outputs
CE
H
H
L
R/ W
H
↑
X
OE
L
X
X
SEM
L
L
L
I/O 0-7
DATA OUT
DATA IN
______
Mode
Read Semaphore Flag Data Out (I/O 0 -I/O 7 )
Write I/O 0 into Semaphore Flag
Not Allowed
NOTE:
1. There are eight semaphore flags written to via I/O 0 and read from all I/O's. These eight semaphores are addressed by A 0 - A 2 .
2940 tbl 03
Absolute Maximum Ratings (1)
Symbol Rating Commercial Military
& Industrial
Unit
Maximum Operating Temperature
and Supply Voltage (1)
Ambient
V TERM (2)
Terminal Voltage
-0.5 to +7.0
-0.5 to +7.0
V
Grade
Temperature
GND
Vcc
with Respect
to GND
Military
-55 O C to+125 O C
0V
5.0V + 10%
0 C to +70 C
T BIAS
Temperature
-55 to +125
-65 to +135
o
C
Commercial
O O
0V
5.0V + 10%
-40 C to +85 C
Under Bias
Industrial
O O
0V
5.0V + 10%
T STG
Storage
Temperature
-65 to +150
-65 to +150
o
C
NOTES:
2940 tbl 05
I OUT
DC Output
50
50
mA
1. This is the parameter T A . This is the "instant on" case temperature.
Current
2940 tbl 04
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sec-tions of this specification is not implied. Exposure
to absolute maxi-mum rating conditions for extended periods may affect
Recommended DC Operating
Conditions
Symbol Parameter Min. Typ.
Max.
Unit
reliability.
2. V TERM must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of V TERM > Vcc + 10%.
Capacitance (T A = +25°C, f = 1.0Mhz)
V CC
GND
V IH
V IL
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
4.5
0
2.2
-0.5 (1)
5.0
0
____
____
5.5
0
6.0 (2)
0.8
V
V
V
V
Symbol
C IN
C OUT
Parameter (1)
Input Capacitance
Output Capacitance
Conditions (2)
V IN = 3dV
V OUT = 3dV
Max.
9
10
Unit
pF
pF
NOTES:
1. V IL > -1.5V for pulse width less than 10ns.
2. V TERM must not exceed Vcc + 10%.
2940 tbl 06
NOTES:
2940 tbl 07
1. This parameter is determined by device characterization but is not production
tested. TQFP package only.
2. 3dV represents the interpolated capacitance when the input and output signals
switch from 0V to 3V or from 3V to 0V.
5
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT7007S20PFB | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM |
| IDT7007S20PFI | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM |
| IDT7007S25G | 功能描述:IC SRAM 256KBIT 25NS 68PGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT7007S25GB | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM |
| IDT7007S25GI | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 32K x 8 DUAL-PORT STATIC RAM |
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