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参数资料
| 型号： | IDT7008S20J8 |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 9/19页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 512KBIT 20NS 84PLCC |
| 标准包装： | 200 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 512K (64K x 8) |
| 速度： | 20ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 84-LCC（J 形引线） |
| 供应商设备封装： | 84-PLCC（29.21x29.21） |
| 包装： | 带卷 (TR) |
| 其它名称： | 7008S20J8 |
IDT7008S/L
High-Speed 64K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range (6)
7008X15
Com'l Only
7008X20
Com'l
& Ind
7008X25
Com'l &
Military
7008X35
Com'l &
Military
7008X55
Com'l, Ind
& Military
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Unit
READ CYCLE
t RC
t AA
Read Cycle Time
Address Access Time
15
____
____
15
20
____
____
20
25
____
____
25
35
____
____
35
55
____
____
55
ns
ns
t ACE
Chip Enable Access Time
(4)
____
15
____
20
____
25
____
35
____
55
ns
t AOE
t OH
Output Enable Access Time
Output Hold from Address Change
____
3
10
____
____
3
12
____
____
3
13
____
____
3
20
____
____
3
30
____
ns
ns
t LZ
Output Low-Z Time
(1,2)
3
____
3
____
3
____
3
____
3
____
ns
t HZ
Output High-Z Time
(1,2)
____
10
____
12
____
15
____
15
____
25
ns
t PU
Chip Enable to Power Up Time
(2)
0
____
0
____
0
____
0
____
0
____
ns
t PD
t SOP
t SAA
Chip Disable to Power Down Time (2)
Semaphore Flag Update Pulse ( OE or SEM )
Semaphore Address Access Time
____
10
____
15
____
15
____
10
____
20
____
20
____
12
____
25
____
25
____
15
____
35
____
35
____
15
____
50
____
55
ns
ns
ns
3198 tbl 12
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage (6)
7008X15
Com'l Only
7008X20
Com'l
& Ind
7008X25
Com'l &
Military
7008X35
Com'l &
Military
7008X55
Com'l, Ind
& Military
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Unit
WRITE CYCLE
t WC
Write Cycle Time
15
____
20
____
25
____
35
____
55
____
ns
t EW
Chip Enable to End-of-Write
(3)
12
____
15
____
20
____
30
____
45
____
ns
t AW
Address Valid to End-of-Write
12
____
15
____
20
____
30
____
45
____
ns
t AS
Address Set-up Time
(3)
0
____
0
____
0
____
0
____
0
____
ns
t WP
t WR
t DW
t HZ
Write Pulse Width
Write Recovery Time
Data Valid to End-of-Write
Output High-Z Time (1,2)
12
0
10
____
____
____
____
10
15
0
15
____
____
____
____
12
20
0
15
____
____
____
____
15
25
0
15
____
____
____
____
15
40
0
30
____
____
____
____
25
ns
ns
ns
ns
t DH
Data Hold Time
(5)
0
____
0
____
0
____
0
____
0
____
ns
Write Enable to Output in High-Z
t WZ
(1,2)
____
10
____
12
____
15
____
15
____
25
ns
t OW
t SWRD
t SPS
Output Active from End-of-Write
SEM Flag Write to Read Time
SEM Flag Contention Window
(1,2,5)
0
5
5
____
____
____
0
5
5
____
____
____
0
5
5
____
____
____
0
5
5
____
____
____
0
5
5
____
____
____
ns
ns
ns
NOTES:
3198 tbl 13
1. Transition is measured 0mV from Low- or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranted by device characterization, but is not production tested.
3. To access RAM, CE = V IL and SEM = V IH . To access semaphore, CE = V IH and SEM = V IL . Either condition must be valid for the entire t EW time.
4. To access RAM, CE = V IL and SEM = V IH . To access semaphore, CE = V IH and SEM = V IL .
5. The specification for t DH must be met by the device supplying write data to the RAM under all operating conditions. Although t DH and t OW values will vary over voltage
and temperature, the actual t DH will always be smaller than the actual t OW .
6. 'X' in part numbers indicates power rating (s or L).
9
6.42
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT7008S20JB | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM |
| IDT7008S20JI | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM |
| IDT7008S20PF | 功能描述:IC SRAM 512KBIT 20NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
| IDT7008S20PF8 | 功能描述:IC SRAM 512KBIT 20NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
| IDT7008S20PFB | 制造商:IDT 制造商全称:Integrated Device Technology 功能描述:HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM |
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