参数资料
型号: IDT7014S25PFI
厂商: INTEGRATED DEVICE TECHNOLOGY INC
元件分类: DRAM
英文描述: HIGH-SPEED 4K x 9DUAL-PORT STATIC RAM
中文描述: 4K X 9 DUAL-PORT SRAM, 25 ns, PQFP64
封装: TQFP-64
文件页数: 4/9页
文件大小: 89K
代理商: IDT7014S25PFI
IDT7014S
High-Speed 4K x 9 Dual-Port Static RAM Industrial and Commercial Temperature Ranges
4
+,%-,%
&'()*
*
./*12"
&'
"
&
.3/4 .05"&6%)
NOTES:
1. This parameter is determned by device characteristics but is not production
tested.
2. 3dv references the interpolated capacitance when the input and output signals
swith from0V to 3V or from3V to 0V.
Figure 1. AC Output Test Load.
Figure 2. Output Test Load
(for t
HZ
, t
WZ
, and t
OW
)
*Including scope and jig.
Figure 3. Typical Output Derating (Lumped Capacitive Load).
NOTES:
1. At f = fmax, address inputs are cycling at the maximumread cycle of 1/t
RC
using the "AC Test Conditions" input levels of GND to 3V.
893
30pF
347
DATA
OUT
5V
5V
893
5pF*
347
DATA
OUT
2528 drw 05
2528 drw 04
1
2
3
4
5
6
7
8
20 40
100
60 80
Capacitance (pF)
120 140 160 180 200
t
AA
(Typical, ns)
2528 drw 06
-1
0
- 10pF is the I/O capacitance
of this device, and 30pF is the
AC Test Load Capacitance
,
Symbol
Parameter
Test Condition
Version
7014S12
Coml Only
7014S15
Coml & Ind
Unit
Typ.
Max
Typ.
Max
I
CC
Dynamc Operating
Current
(Both Ports Active)
Outputs Open
f = f
MAX
(1)
COML
S
160
250
160
250
mA
IND
S
____
____
160
260
2528 tbl 05a
Symbol
Parameter
Test Condition
Version
7014S20
Coml & Ind
7014S25
Coml & Ind
Unit
Typ.
Max
Typ.
Max.
I
CC
Dynamc Operating
Current
(Both Ports Active)
Outputs Open
f = f
MAX
(1)
COML
S
155
245
150
240
mA
IND
S
155
260
150
255
2528 tbl 05b
Input Pulse Levels
Input Rise/Fall Times
Input Timng Reference Levels
Output Reference Levels
Output Load
GND to 3.0V
3ns Max.
1.5V
1.5V
Figures 1,2 and 3
2528 tbl 06
Symbol
Parameter
Conditions
(2)
Max.
Unit
C
IN
Input Capacitance
V
IN
= 3dV
9
pF
C
OUT
Output Capacitance
V
OUT
= 3dV
10
pF
2528 tbl 07
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IDT7014S20JI HIGH-SPEED 4K x 9DUAL-PORT STATIC RAM
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