参数资料
型号: IDT70261S15PF8
厂商: IDT, Integrated Device Technology Inc
文件页数: 4/19页
文件大小: 0K
描述: IC SRAM 256KBIT 15NS 100TQFP
标准包装: 750
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,异步
存储容量: 256K(16K x 16)
速度: 15ns
接口: 并联
电源电压: 4.5 V ~ 5.5 V
工作温度: 0°C ~ 70°C
封装/外壳: 100-LQFP
供应商设备封装: 100-TQFP(14x14)
包装: 带卷 (TR)
其它名称: 70261S15PF8
IDT70261S/L
High-Speed 16K x 16 Dual-Port Static RAM with Interrupt
Absolute Maximum Ratings (1)
Industrial and Commercial Temperature Ranges
Capacitance (1) (T A = +25°C, f = 1.0Mhz)
Symbol
Rating
Commercial
Unit
Symbol
Parameter
Conditions (2)
Max.
Unit
& Industrial
V TERM (2)
Terminal Voltage
with Respect
to GND
-0.5 to +7.0
V
C IN
C OUT
Input Capacitance
Output
Capacitance
V IN = 3dV
V OUT = 3dV
9
10
pF
pF
T BIAS
T STG
Temperature
Under Bias
Storage
-55 to +125
-65 to +150
o
o
C
C
3039 tbl 07
NOTES:
1. This parameter is determined by device characterization but is not production
tested.
Temperature
2. 3dV represents the interpolated capacitance when the input and output signals
I OUT
DC Output
50
mA
switch from 0V to 3V or from 3V to 0V.
Current
3039 tbl 06
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect
reliability.
2. V TERM must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of V TERM > Vcc + 10%.
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (V CC = 5.0V ± 10%)
70261S
70261L
Symbol
|I LI |
|I LO |
V OL
V OH
Parameter
Input Leakage Current (1)
Output Leakage Current
Output Low Voltage
Output High Voltage
Test Conditions
V CC = 5.5V, V IN = 0V to V CC
CE = V IH , V OUT = 0V to V CC
I OL = 4mA
I OH = -4mA
Min.
___
___
___
2.4
Max.
10
10
0.4
___
Min.
___
___
___
2.4
Max.
5
5
0.4
___
Unit
μA
μA
V
V
NOTE:
1. At Vcc < 2.0V, input leakages are undefined.
3039 tbl 08
AC Test Conditions
5V
5V
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
GND to 3.0V
3ns
1.5V
DATA OUT
BUSY
893 ?
DATA OUT
893 ?
Output Reference Levels
1.5V
INT
347 ?
30pF
347 ?
5pF*
Output Load
Figures 1 and 2
3039 tbl 09
3039 drw 03
Figure 1. AC Output Test Load
3039 drw 04
Figure 2. Output Test Load
,
(for t LZ , t HZ , t WZ , t OW )
*Including scope and jig.
6.42
相关PDF资料
PDF描述
IDT7007S15PF8 IC SRAM 256KBIT 15NS 80TQFP
IDT70V25L25J IC SRAM 128KBIT 25NS 84PLCC
IDT70V25L20J IC SRAM 128KBIT 20NS 84PLCC
IDT7025L45J IC SRAM 128KBIT 45NS 84PLCC
IDT7025L35J IC SRAM 128KBIT 35NS 84PLCC
相关代理商/技术参数
参数描述
IDT70261S20PF 功能描述:IC SRAM 256KBIT 20NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70261S20PF8 功能描述:IC SRAM 256KBIT 20NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,异步 存储容量:128K(8K x 16) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x14) 包装:托盘 其它名称:70V25S15PF
IDT70261S25PF 功能描述:IC SRAM 256KBIT 25NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70261S25PF8 功能描述:IC SRAM 256KBIT 25NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,异步 存储容量:128K(8K x 16) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x14) 包装:托盘 其它名称:70V25S15PF
IDT70261S25PFI 功能描述:IC SRAM 256KBIT 25NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8