参数资料
型号: IDT70914S20J
厂商: IDT, Integrated Device Technology Inc
文件页数: 2/11页
文件大小: 0K
描述: IC SRAM 36KBIT 20NS 68PLCC
标准包装: 3
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,同步
存储容量: 36K(4K x 9)
速度: 20ns
接口: 并联
电源电压: 4.5 V ~ 5.5 V
工作温度: 0°C ~ 70°C
封装/外壳: 68-LCC(J 形引线)
供应商设备封装: 68-PLCC(24x24)
包装: 管件
其它名称: 70914S20J
IDT70914S
High-Speed 36K (4K x 9) Synchronous Dual-Port Static RAM
Description
The IDT70914 is a high-speed 4K x 9 bit synchronous Dual-Port RAM.
The memory array is based on Dual-Port memory cells to allow
simultaneous access from both ports. Registers on control, data, and
address inputs provide low set-up and hold times. The timing latitude
provided by this approach allow systems to be designed with very short
cycle times. With an input data register, this device has been optimized for
applications having unidirectional data flow or bi-directional data flow in
bursts.
The IDT70914 utilizes a 9-bit wide data path to allow for parity at the
user's option. This feature is especially useful in data communication
applications where it is necessary to use a parity bit for transmission/
Pin Configurations (1,2,3)
INDEX
Military, Industrial and Commercial Temperature Ranges
reception error checking.
Fabricated using IDT’s CMOS high-performance technology, these
Dual-Ports typically operate on only 850mW of power at maximum high-
speed clock-to-data output times as fast as 12ns. An automatic power
down feature, controlled by CE , permits the on-chip circuitry of each port
to enter a very low standby power mode.
The IDT70914 is packaged in a 68-pin PLCC, and an 80-pin TQFP.
Military grade product is manufactured in compliance with the latest revision
of MIL-PRF-38535 QML, making it ideally suited for military temperature
applications demanding the highest level of performance and reliability.
9
8
7
6
5
4
3
2
68 67 66 65 64 63 62 61
A 6L
A 7L
A 8L
A 9L
A 10L
A 11L
OE L
N/C
V CC
R/ W L
N/C
N/C
CE L
GND
I/O 8L
I/O 7L
I/O 6L
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
1
IDT70914J
J68-1 (4)
68-Pin PLCC
Top View (5)
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
A 7R
A 8R
A 9R
A 10R
A 11R
OE R
N/C
GND
GND
R/ W R
N/C
N/C
CE R
GND
I/O 8R
I/O 7R
I/O 6R
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
,
3490 drw 03
NOTES:
1. All V CC pins must be connected to power supply.
2. All ground pins must be connected to ground supply.
3. J68-1 package body is approximately .95 in x .95 in x .17 in.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part-marking.
6.42
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IDT70914S20J8 功能描述:IC SRAM 36KBIT 20NS 68PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,异步 存储容量:128K(8K x 16) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x14) 包装:托盘 其它名称:70V25S15PF
IDT70914S20PF 功能描述:IC SRAM 36KBIT 20NS 80TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,异步 存储容量:128K(8K x 16) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x14) 包装:托盘 其它名称:70V25S15PF
IDT70914S20PF8 功能描述:IC SRAM 36KBIT 20NS 80TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,异步 存储容量:128K(8K x 16) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x14) 包装:托盘 其它名称:70V25S15PF
IDT70914S25J 功能描述:IC SRAM 36KBIT 25NS 68PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,异步 存储容量:128K(8K x 16) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x14) 包装:托盘 其它名称:70V25S15PF
IDT70914S25J8 功能描述:IC SRAM 36KBIT 25NS 68PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,异步 存储容量:128K(8K x 16) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x14) 包装:托盘 其它名称:70V25S15PF