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参数资料
| 型号： | IDT70T3719MS166BBGI |
| 厂商： | Integrated Device Technology, Inc. |
| 英文描述： | HIGH-SPEED 2.5V 256/128K x 72 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| 中文描述： | 高速与3.3V 2.5V的256/128K × 72 SYNCHRONOU S双，端口静态RAM或2.5V的接口 |
| 文件页数： | 13/25页 |
| 文件大小： | 316K |
| 代理商： | IDT70T3719MS166BBGI |
6.42
IDT70T3719/99M
High-Speed 2.5V 256/128K x 72 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges
T iming Waveform of Left Port Write to Pipelined Right Port Read
(1,2,4)
Advanced
CLK
"A"
R/
W
"A
"
ADDRESS
"A"
DATA
IN"A"
CLK
"B"
R/
W
"B"
ADDRESS
"B"
DATA
OUT"B"
t
SW
t
HW
t
SA
t
HA
t
SD
t
HD
t
SW
t
HW
t
SA
t
HA
t
CO
(3)
t
CD2
MNO
VALID
MNO
MATCH
MATCH
VALID
5687 drw 09
t
DC
,
NOTES:
1.
CE
0
,
BE
n
, and
ADS
= V
IL
; CE
1
,
CNTEN
, and
REPEAT
= V
IH
.
2.
OE
= V
IL
for Port "B", which is being read from
OE
= V
IH
for Port "A", which is being written to.
3. If t
CO
< mnimumspecified, then data fromPort "B" read is not valid until following Port "B" clock cycle (ie, time fromwrite to valid read on opposite port will be
t
CO
+ 2 t
CYC2
+ t
CD2
). If t
CO
> mnimum then data fromPort "B" read is available on first Port "B" clock cycle (ie, time fromwrite to valid read on opposite port
will be t
CO
+ t
CYC2
+ t
CD2
).
4. All timng is the same for Left and Right ports. Port "A" may be either Left or Right port. Port "B" is the opposite of Port "A"
T iming Waveform with Port-to-Port Flow-T hrough Read
(1,2,4)
DATA
IN "A"
CLK
"B"
R/
W
"B"
ADDRESS
"A"
R/
W
"A"
CLK
"A"
ADDRESS
"B"
NO
MATCH
MATCH
NO
MATCH
MATCH
VALID
t
CD1
t
DC
DATA
OUT "B"
5687 drw 10
VALID
VALID
t
SW
t
HW
t
SA
t
HA
t
SD
t
HD
t
HW
t
HA
t
CD1
t
CO
t
DC
t
SA
t
SW
(3)
,
NOTES:
1.
CE
0
,
BE
n, and
ADS
= V
IL
; CE
1
,
CNTEN
, and
REPEAT
= V
IH
.
2.
OE
= V
IL
for the Right Port, which is being read from
OE
= V
IH
for the Left Port, which is being written to.
3. If t
CO
< mnimumspecified, then data fromPort "B" read is not valid until following Port "B" clock cycle (i.e., time fromwrite to valid read on opposite port will be
t
CO
+ t
CYC
+ t
CD1
). If t
CO
> mnimum then data fromPort "B" read is available on first Port "B" clock cycle (i.e., time fromwrite to valid read on opposite port will
be t
CO
+ t
CD1
).
4. All timng is the same for both left and right ports. Port "A" may be either left or right port. Port "B" is the opposite of Port "A".
相关PDF资料 |
PDF描述 |
|---|---|
| IDT70T3799M | HIGH-SPEED 2.5V 256/128K x 72 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70T3799MS133BBG | HIGH-SPEED 2.5V 256/128K x 72 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70T3799MS133BBGI | HIGH-SPEED 2.5V 256/128K x 72 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70T3799MS166BBG | HIGH-SPEED 2.5V 256/128K x 72 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
| IDT70T3799MS166BBGI | HIGH-SPEED 2.5V 256/128K x 72 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT70T3799MS133BBG | 功能描述:IC SRAM 9MBIT 133MHZ 324BGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70T3799MS133BBGI | 功能描述:IC SRAM 9MBIT 133MHZ 324BGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70T3799MS166BBG | 功能描述:IC SRAM 9MBIT 166MHZ 324BGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70T631S10BC | 功能描述:IC SRAM 4MBIT 10NS 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70T631S10BC8 | 功能描述:IC SRAM 4MBIT 10NS 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
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