参数资料
型号: IDT70V07S35J8
厂商: IDT, Integrated Device Technology Inc
文件页数: 5/19页
文件大小: 0K
描述: IC SRAM 256KBIT 35NS 68PLCC
标准包装: 250
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,异步
存储容量: 256K (32K x 8)
速度: 35ns
接口: 并联
电源电压: 3 V ~ 3.6 V
工作温度: 0°C ~ 70°C
封装/外壳: 68-LCC(J 形引线)
供应商设备封装: 68-PLCC(24x24)
包装: 带卷 (TR)
其它名称: 70V07S35J8
IDT70V07S/L
High-Speed 32K x 8 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Truth Table I: Non-Contention Read/Write Control
Inputs (1)
Outputs
CE
H
L
L
X
R/ W
X
L
H
X
OE
X
X
L
H
SEM
H
H
H
X
I/O 0-7
High-Z
DATA IN
DATA OUT
High-Z
Deselected: Power-Down
Write to Memory
Read Memory
Outputs Disabled
Mode
NOTE:
1. A 0L — A 14L ≠ A 0R — A 14R
Truth Table II: Semaphore Read/Write Control
2943 tbl 02
Inputs (1)
Outputs
CE
H
H
L
R/ W
H
X
OE
L
X
X
SEM
L
L
L
I/O 0-7
DATA OUT
DATA IN
____
Read Data in Semaphore Flag
Write I/O 0 into Semaphore Flag
Not Allowed
Mode
NOTE:
1. There are eight semaphore flags written to via I/O 0 and read from all I/O's (I/O 0 -I/O 7 ). These eight semaphores are addressed by A 0 -A 2
2943 tbl 03
Absolute Maximum Ratings (1)
Symbol Rating Commercial
& Industrial
Unit
Maximum Operating Temperature
and Supply Voltage (1)
Grade Ambient Temperature GND Vcc
V TERM (2)
Terminal Voltage
with Respect to GND
-0.5 to +4.6
V
Commercial
0 O C to +70 O C
0V
3.3V + 0.3
T BIAS (3)
T STG
Temperature Under Bias
StorageTemperature
-55 to +125
-65 to +150
o
o
C
C
Industrial
NOTES:
-40 O C to +85 O C
0V
3.3V + 0.3
2943 tbl 05
T JN
Junction Temperature
+150
o
C
1. This is the parameter T A . This is the "instant on" case temperature.
I OUT
DC Output Current
50
mA
NOTES:
2943 tbl 04
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in
the operational sections of this specification is not implied. Exposure to absolute
Recommended DC Operating
Conditions (2)
Symbol Parameter Min. Typ. Max.
Unit
maximum rating conditions for extended periods may affect reliability.
2. V TERM must not exceed Vcc + 0.3V.
3. Ambient Temperature Under Bias. No AC Conditions. Chip Deselected.
Capacitance (1)
(T A = +25°C, f = 1.0MHz) TQFP Only
V CC
GND
V IH
V IL
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
3.0
0
2.0
-0.3 (1)
3.3
0
____
____
3.6
0
V CC +0.3 (2)
0.8
V
V
V
V
Symbol
C IN
C OUT (2)
Parameter
Input Capacitance
Output Capacitance
Conditions
V IN = 0V
V OUT = 0V
Max.
9
10
Unit
pF
pF
NOTES:
1. V IL > -1.5V for pulse width less than 10ns.
2. V TERM must not exceed Vcc + 0.3V.
2943 tbl 06
NOTES:
2943 tbl 07
1. This parameter is determined by device characterization but is not production
tested.
2. C OUT also references C I/O .
5
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