参数资料
型号: IDT70V18L20PFI
厂商: IDT, Integrated Device Technology Inc
文件页数: 5/17页
文件大小: 0K
描述: IC SRAM 576KBIT 20NS 100TQFP
标准包装: 6
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,异步
存储容量: 576K(64K x 9)
速度: 20ns
接口: 并联
电源电压: 3 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 100-LQFP
供应商设备封装: 100-TQFP(14x14)
包装: 托盘
其它名称: 70V18L20PFI
IDT70V18L
High-Speed 3.3V 64K x 9 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (V CC = 3.3V ± 0.3V)
70V18L
Input Leakage Current
Symbol
|I LI |
|I LO |
V OL
V OH
Parameter
(1)
Output Leakage Current
Output Low Voltage
Output High Voltage
Test Conditions
V CC = 3.6V, V IN = 0V to V CC
CE (2) = V IH , V OUT = 0V to V CC
I OL = +4mA
I OH = -4mA
Min.
___
___
___
2.4
Max.
5
5
0.4
___
Unit
μA
μA
V
V
NOTES:
1. At Vcc < 2.0V, input leakages are undefined.
2. Refer to Truth Table I - Chip Enable- .
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (5) (V CC = 3.3V ± 0.3V)
70V18L15
Com'l Only
70V18L20
Com'l
& Ind
4854 tbl 09
Symbol
Parameter
Test Condition
Version
Typ. (1)
Max.
Typ. (1)
Max.
Unit
I CC
I SB1
Dynamic Operating
Current
(Both Ports Active)
Standby Current
(Both Ports - TTL Level
Inputs)
CE = V IL , Outputs Disabled
SEM = V IH
f = f MAX (2)
CE L = CE R = V IH
SEM R = SEM L = V IH
f = f MAX (2)
COM'L
IND
COM'L
IND
L
L
L
L
145
---
40
---
235
---
70
---
135
135
35
35
205
220
55
65
mA
mA
I SB2
Standby Current
CE "A" = V IL and CE "B" = V IH
(4)
COM'L
L
100
155
90
140
mA
(One Port - TTL Level
Inputs)
Active Port Outputs Disabled,
f=f MAX (2) , SEM R = SEM L = V IH
IND
L
---
---
90
150
I SB3
I SB4
Full Standby Current
(Both Ports - All CMOS
Level Inputs)
Full Standby Current
(One Port - All CMOS
Level Inputs)
Both Ports CE L and CE R > V CC - 0.2V,
V IN > V CC - 0.2V or V IN < 0.2V, f = 0 (3)
SEM R = SEM L > V CC - 0.2V
CE "A" < 0.2V and CE "B" > V CC - 0.2V (4) ,
SEM R = SEM L > V CC - 0.2V,
V IN > V CC - 0.2V or V IN < 0.2V,
Active Port Outputs Disabled , f = f MAX (2)
COM'L
IND
COM'L
IND
L
L
L
L
0.2
---
95
---
3.0
---
150
---
0.2
0.2
90
90
3.0
3.0
135
145
mA
mA
NOTES:
4854 tbl 10
1. V CC = 3.3V, T A = +25°C, and are not production tested. I CCDC = 90mA (Typ.)
2. At f = f MAX , address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/t RC, and using “AC Test Conditions" of input levels of GND
to 3V.
3. f = 0 means no address or control lines change.
4. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
5. Refer to Truth Table I - Chip Enable.
5
相关PDF资料
PDF描述
IDT70V25L55G IC SRAM 128KBIT 55NS 84PGA
IDT70V261L25PFGI IC SRAM 256KBIT 25NS 100TQFP
IDT70V26L35G IC SRAM 256KBIT 35NS 84PGA
IDT70V27S15PF IC SRAM 512KBIT 15NS 100TQFP
IDT70V28L20PFGI IC SRAM 1MBIT 20NS 100TQFP
相关代理商/技术参数
参数描述
IDT70V18L20PFI8 功能描述:IC SRAM 576KBIT 20NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70V19L15PF 功能描述:IC SRAM 1.125MBIT 15NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70V19L15PF8 功能描述:IC SRAM 1.125MBIT 15NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70V19L20PF 功能描述:IC SRAM 1.125MBIT 20NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70V19L20PF8 功能描述:IC SRAM 1.125MBIT 20NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8