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参数资料
| 型号： | IDT70V3599S133BF8 |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 23/23页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 4MBIT 133MHZ 208FBGA |
| 标准包装： | 1,000 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，同步 |
| 存储容量： | 4.5M（128K x 36） |
| 速度： | 133MHz |
| 接口： | 并联 |
| 电源电压： | 3.15 V ~ 3.45 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 208-LFBGA |
| 供应商设备封装： | 208-CABGA（15x15） |
| 包装： | 带卷 (TR) |
| 其它名称： | 70V3599S133BF8 |
IDT70V3599/89S
High-Speed 3.3V 128/64K x 36 Dual-Port Synchronous Static RAM
Datasheet Document History:
Industrial and Commercial Temperature Ranges
06/02/00:
07/12/00:
Initial Public Offering
Added mux to functional block diagram
07/30/01:
11/20/01:
Page 20
Page 9
Pages 2, 3 & 4
Changed maximum value for JTAG AC Electrical Characteristics for t JCD from 20ns to 25ns
Added Industrial Temperature DC Parameters
Added date revision for pin configurations
07/01/02:
Page 11
Pages 1 & 22
Page 10
Pages 1 & 5
Page 7
Page 9
Page 11
Changed t OE value in AC Electrical Characteristics, please refer to Errata #SMEN-01-05
Replaced TM logo with ? logo
Changed AC Test Conditions Input Rise/Fall Times
Consolidated multiple devices into one datasheet
Added DCD capability for Pipelined Outputs
Clarified T BIAS and added T JN
Changed DC Electrical Parameters
Removed Clock Rise & Fall Time from AC Electrical Characteristics Table
Removed Preliminary status
05/19/03:
01/10/06:
07/25/08:
01/19/09:
07/26/10:
Page 11
Page 22
Page 1
Page 5
Page 22
Page 9
Page 22
Page 11
Pages 13-16
Added Byte Enable SetupTime & Byte Enable Hold Time to AC Elecctrical Characteristics Table
Added IDT Clock Solution Table
Added green availability to features
Changed footnote 2 for Truth Table I from ADS , CNTEN , REPEAT = V IH to ADS , CNTEN , REPEAT = X
Added green indicator to ordering information
Corrected a typo in the DC Chars table
Removed "IDT" from orderable part number
In order to correct the header notes of the AC Elect Chars Table and align them with the Industrial temp range
values located in the table, the commercial T A header note has been removed
In order to correct the footnotes of timing diagrams, CNTEN has been removed to reconcile the footnotes with
the CNTEN logic definition found in Truth Table II - Address Counter Control
CORPORATE HEADQUARTERS
6024 Silver Creek Valley Road
San Jose, CA 95138
for SALES:
800-345-7015 or 408-284-8200
fax: 408-284-2775
for Tech Support:
408-284-2794
DualPortHelp@idt.com
www.idt.com
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT70V3599S133BFGI | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 4.5MBIT 133MHZ 208FPBGA |
| IDT70V3599S133BFGI8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 4.5MBIT 133MHZ 208FPBGA |
| IDT70V3599S133BFI | 功能描述:IC SRAM 4MBIT 133MHZ 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70V3599S133BFI8 | 功能描述:IC SRAM 4MBIT 133MHZ 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70V3599S133DR | 功能描述:IC SRAM 4MBIT 133MHZ 208QFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
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