参数资料
型号: IDT70V38L20PF
厂商: IDT, Integrated Device Technology Inc
文件页数: 13/17页
文件大小: 0K
描述: IC SRAM 1.125MBIT 20NS 100TQFP
标准包装: 6
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,异步
存储容量: 1.125M(64K x 18)
速度: 20ns
接口: 并联
电源电压: 3 V ~ 3.6 V
工作温度: 0°C ~ 70°C
封装/外壳: 100-LQFP
供应商设备封装: 100-TQFP(14x14)
包装: 托盘
其它名称: 70V38L20PF
IDT70V38L
High-Speed 3.3V 64K x 18 Dual-Port Static RAM
Waveform of Interrupt Timing (1,5)
t WC
Industrial and Commercial Temperature Ranges
ADDR "A"
INTERRUPT SET ADDRESS
(2)
t AS
(3)
t WR
(4)
CE "A"
R/ W "A"
t INS
(3)
INT "B"
4850 drw 15
t RC
ADDR "B"
INTERRUPT CLEAR ADDRESS
(3)
t AS
(2)
CE "B"
OE "B"
t INR (3)
INT "B"
4850 drw 16
NOTES:
1. All timing is the same for left and right ports. Port “A” may be either the left or right port. Port “B” is the port opposite from port “A”.
2. Refer to Interrupt Truth Table.
3. Timing depends on which enable signal ( CE or R/ W ) is asserted last.
4. Timing depends on which enable signal ( CE or R/ W ) is de-asserted first.
5. Refer to Truth Table I - Chip Enable.
Truth Table IV — Interrupt Flag (1,4,5)
Left Port
Right Port
H
R/ W L
L
X
CE L
L
X
OE L
X
X
A 15L -A 0L
FFFF
X
INT L
X
X
R/ W R
X
X
CE R
X
L
OE R
X
L
A 15R -A 0R
X
FFFF
INT R
L (2)
(3)
Function
Set Right INT R Flag
Reset Right INT R Flag
X
X
X
X
L
(3)
L
L
X
FFFE
X
Set Left INT L Flag
H
X
L
L
FFFE
(2)
X
X
X
X
X
Reset Left INT L Flag
NOTES:
1. Assumes BUSY L = BUSY R =V IH .
2. If BUSY L = V IL , then no change.
3. If BUSY R = V IL , then no change.
4. INT L and INT R must be initialized at power-up.
5. Refer to Truth Table I - Chip Enable.
13
4850 tbl 16
相关PDF资料
PDF描述
IDT70V28L20PF IC SRAM 1MBIT 20NS 100TQFP
KMPC855TVR80D4 IC MPU POWERQUICC 80MHZ 357-PBGA
KMPC855TCZQ66D4 IC MPU POWERQUICC 66MHZ 357-PBGA
IDT70V9279L6PRF IC SRAM 512KBIT 6NS 128TQFP
KMPC855TCZQ50D4 IC MPU POWERQUICC 50MHZ 357-PBGA
相关代理商/技术参数
参数描述
IDT70V38L20PF8 功能描述:IC SRAM 1.125MBIT 20NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70V38L20PFGI 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 1.125MBIT 20NS 100TQFP
IDT70V38L20PFGI8 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 1.125MBIT 20NS 100TQFP
IDT70V38L20PFI 功能描述:IC SRAM 1.125MBIT 20NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
IDT70V38L20PFI8 功能描述:IC SRAM 1.125MBIT 20NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8