参数资料
型号: IDT70V657S15BC8
厂商: IDT, Integrated Device Technology Inc
文件页数: 23/24页
文件大小: 0K
描述: IC SRAM 1.125MBIT 15NS 256BGA
标准包装: 1,000
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,异步
存储容量: 1.125M(32K x 36)
速度: 15ns
接口: 并联
电源电压: 3.15 V ~ 3.45 V
工作温度: 0°C ~ 70°C
封装/外壳: 256-LBGA
供应商设备封装: 256-CABGA(17x17)
包装: 带卷 (TR)
其它名称: 70V657S15BC8
IDT70V659/58/57S
High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM
Identification Register Definitions
Industrial and Commercial Temperature Ranges
Instruction Field
Revision Number (31:28)
IDT Device ID (27:12)
IDT JEDEC ID (11:1)
ID Register Indicator Bit (Bit 0)
NOTE:
Value
0x0
0x303 (1)
0x33
1
Description
Reserved for version number
Defines IDT part number
Allows unique identification of device vendor as IDT
Indicates the presence of an ID register
4869 tbl 20
1. Device ID for IDT70V658 is 0x30B. Device ID for IDT70V657 is 0x323.
Scan Register Sizes
Register Name
Instruction (IR)
Bypass (BYR)
Identification (IDR)
Boundary Scan (BSR)
Bit Size
4
1
32
Note (3)
4869 tbl 21
System Interface Parameters
Instruction
EXTEST
BYPASS
IDCODE
HIGHZ
CLAMP
SAMPLE/PRELOAD
RESERVED
NOTES:
Code
0000
1111
0010
0100
0011
0001
All other codes
Description
Forces contents of the boundary scan cells onto the device outputs (1) .
Places the boundary scan registe r (BSR) between TDI and TDO.
Places the by pass register (BYR) between TDI and TDO.
Loads the ID register (IDR) with the vendor ID code and places the
register between TDI and TDO.
Places the bypass register (BYR) be tween TDI and TDO. Forces all
device output drivers to a High-Z state.
Uses BYR. Forces contents of the boundary scan cells onto the device
outputs. Places the by pass register (BYR) between TDI and TDO.
Places the boundary scan registe r (BSR) between TDI and TDO.
SAMPLE allows data from device inputs (2) and outputs (1) to be captured
in the boundary scan cells and shifted serially through TDO. PRELOAD
allows data to be input serially into the boundary scan cells via the TDI.
Several combinations are reserved. Do not use codes other than those
identified above.
4869 tbl 22
1. Device outputs = All device outputs except TDO.
2. Device inputs = All device inputs except TDI, TMS, and TRST .
3. The Boundary Scan Descriptive Language (BSDL) file for this device is available on the IDT website (www.idt.com), or by contacting your local
IDT sales representative.
23
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IDT70V657S15BCG 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Async Dual 3.3V 1.125M-Bit 32K x 36 15ns 256-Pin CABGA
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IDT70V657S15BF8 功能描述:IC SRAM 1.125MBIT 15NS 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT70V657S15DR 功能描述:IC SRAM 1.125MBIT 15NS 208QFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:带卷 (TR)
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