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| 型号： | IDT70V7319S166BCI |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 5/21页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 4MBIT 166MHZ 256BGA |
| 标准包装： | 6 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，同步 |
| 存储容量： | 4.5M（256K x 18） |
| 速度： | 166MHz |
| 接口： | 并联 |
| 电源电压： | 3.15 V ~ 3.45 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 256-LBGA |
| 供应商设备封装： | 256-CABGA（17x17） |
| 包装： | 托盘 |
| 其它名称： | 70V7319S166BCI |
IDT70V7319S
High-Speed 256K x 18 Synchronous Bank-Switchable Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
Truth Table I—Read/Write and Enable Control (1,2,3,4)
Upper Byte
Lower Byte
OE 3
X
X
X
X
X
X
L
L
L
H
CLK
↑
↑
↑
↑
↑
↑
↑
↑
↑
X
CE 0
H
X
L
L
L
L
L
L
L
X
CE 1
X
L
H
H
H
H
H
H
H
X
UB
X
X
H
H
L
L
H
L
L
X
LB
X
X
H
L
H
L
L
H
L
X
R/ W
X
X
X
L
L
L
H
H
H
X
I/O 9-17
High-Z
High-Z
High-Z
High-Z
D IN
D IN
High-Z
D OUT
D OUT
High-Z
I/O 0-8
High-Z
High-Z
High-Z
D IN
High-Z
D IN
D OUT
High-Z
D OUT
High-Z
MODE
Deselected –Power Down
Deselected –Power Down
All Bytes Deselected
Write to Lower Byte Only
Write to Upper Byte Only
Write to both Bytes
Read Lower Byte Only
Read UpperByte Only
Read both Bytes
Outputs Disabled
NOTES:
1. "H" = V IH, "L" = V IL, "X" = Don't Care.
2. ADS , CNTEN , REPEAT are set as appropriate for address access. Refer to Truth Table II for details.
3. OE is an asynchronous input signal.
4. It is possible to read or write any combination of bytes during a given access. A few representative samples have been illustrated here.
Truth Table II—Address and Address Counter Control (1,2,7)
5629 tbl 02
Previous
Addr
L
L
Address
An
X
X
X
Address
X
An
An + 1
X
Used
An
An + 1
An + 1
An
CLK
↑
↑
↑
↑
ADS
L (4)
H
H
X
CNTEN
X
(5)
H
X
REPEAT (6)
H
H
H
(4)
I/O (3)
D I/O (n)
D I/O (n+1)
D I/O (n+1)
D I/O (0)
MODE
External Address Used
Counter Enabled —Internal Address generation
External Addre ss Blocked —Counter disabled (An + 1 reused)
Counter Set to last valid ADS load
NOTES:
5629 tbl 03
1. "H" = V IH, "L" = V IL, "X" = Don't Care.
2. Read and write operations are controlled by the appropriate setting of R/ W , CE 0 , CE 1 , UB / LB and OE .
3. Outputs configured in flow-through output mode: if outputs are in pipelined mode the data out will be delayed by one cycle.
4. ADS and REPEAT are independent of all other memory control signals including CE 0 , CE 1 and UB / LB
5. The address counter advances if CNTEN = V IL on the rising edge of CLK, regardless of all other memory control signals including CE 0 , CE 1 , UB / LB .
6. When REPEAT is asserted, the counter will reset to the last valid address loaded via ADS . This value is not set at power-up: a known location should be loaded
via ADS during initialization if desired. Any subsequent ADS access during operations will update the REPEAT address location.
7. The counter includes bank address and internal address. The counter will advance across bank boundaries. For example, if the counter is in Bank 0, at address
FFFh, and is advanced one location, it will move to address 0h in Bank 1. By the same token, the counter at FFFh in Bank 63 will advance to 0h in Bank 0. Refer
to Timing Waveform of Counter Repeat, page 17. Care should be taken during operation to avoid having both counters point to the same bank (i.e., ensure BA 0L
- BA 5L ≠ BA 0R - BA 5R ), as this condition will invalidate the access for both ports. Please refer to the functional description on page 18 for details.
5
6.42
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| IDT70V7319S166BCI8 | 功能描述:IC SRAM 4MBIT 166MHZ 256BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70V7319S166BF | 功能描述:IC SRAM 4MBIT 166MHZ 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70V7319S166BF8 | 功能描述:IC SRAM 4MBIT 166MHZ 208FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT70V7319S166DD | 功能描述:IC SRAM 4MBIT 166MHZ 144TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步，DDR II 存储容量:18M（1M x 18） 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA（13x15） 包装:托盘 其它名称:71P71804S200BQ |
| IDT70V7319S166DDI | 功能描述:IC SRAM 4MBIT 166MHZ 144TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步，DDR II 存储容量:18M（1M x 18） 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA（13x15） 包装:托盘 其它名称:71P71804S200BQ |
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