参数资料
型号: IDT71024MS15Y8
厂商: IDT, Integrated Device Technology Inc
文件页数: 2/8页
文件大小: 0K
描述: IC SRAM 1MBIT 15NS 32SOJ
产品变化通告: Product Discontinuation 29/Apr/2010
标准包装: 1,000
格式 - 存储器: RAM
存储器类型: SRAM - 异步
存储容量: 1M (128K x 8)
速度: 15ns
接口: 并联
电源电压: 4.5 V ~ 5.5 V
工作温度: 0°C ~ 70°C
封装/外壳: 32-BSOJ
供应商设备封装: 32-SOJ
包装: 带卷 (TR)
其它名称: 71024MS15Y8
IDT71024 CMOS Static RAM
1 Meg (128K x 8-Bit)
Pin Configuration
Commercial and Industrial Temperature Ranges
Absolute Maximum Ratings (1)
Symbol
Rating
Value
Unit
V TERM
(2)
Terminal Voltage with Respect to GND
–0.5 to +7.0
V
T BIAS
T STG
Temperature Under Bias
Storage Temperature
–55 to +125
–55 to +125
o
o
C
C
P T
I OUT
NOTES:
Power Dissipation
DC Output Current
1.25
50
W
mA
2964 tbl 02
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. V TERM must not exceed V CC + 0.5V.
SOJ
Top View
Truth Table (1,3)
Capacitance
(T A = +25°C, f = 1.0MHz, SOJ package)
Inputs
Symbol
Parameter (1)
Conditions
Max.
Unit
WE
X
CS 1
H
CS 2
X
OE
X
I/O
High-Z
Function
Deselected – Standby (I SB )
C IN
C I/O
Input Capacitance
I/O Capacitance
V IN = 3dV
V OUT = 3dV
7
8
pF
pF
X
V HC (2)
X
X
High-Z
Deselected – Standby (I SB1 )
NOTE:
2964 tbl 03
X
X
H
H
X
X
L
L
L
V LC (2)
H
H
X
X
H
L
High-Z
High-Z
High-Z
DATA OUT
Deselected – Standby (I SB )
Deselected – Standby (I SB1 )
Outputs Disabled
Read Data
1. This parameter is guaranteed by device characterization, but is not production tested.
Recommended DC Operating
Conditions
L
L
H
X
DATA IN
Write Data
Symbol
Parameter
Min.
Typ.
Max.
Unit
–0.5
NOTES:
1. H = V IH , L = V IL , X = Don't care.
2. V LC = 0.2V, V HC = V CC –0.2V.
3. Other inputs ≥ V HC or ≤ V LC.
2964 tbl 01
V CC
GND
V IH
V IL
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
4.5
0
2.2
(1)
5.0
0
____
____
5.5
0
V CC +0.5
0.8
V
V
V
V
Recommended Operating
Temperature and Supply Voltage
NOTE:
1. V IL (min.) = –1.5V for pulse width less than 10ns, once per cycle.
2964 tbl 04
Grade
Commercial
Industrial
Temperature
0°C to +70°C
–40°C to +85°C
GND
0V
0V
V CC
5.0V ± 0.5V
5.0V ± 0.5V
2964 tbl 05
6.42
相关PDF资料
PDF描述
EGM43DTBS CONN EDGECARD 86POS R/A .156 SLD
IDT71024MS15Y IC SRAM 1MBIT 15NS 32SOJ
T86C106M016ESSL CAP TANT 10UF 16V 20% 2312
IDT71016S20YI8 IC SRAM 1MBIT 20NS 44SOJ
EN93F4 BATTERY PK 6.0V C SIZE ALKALINE
相关代理商/技术参数
参数描述
IDT71024S12TY 功能描述:IC SRAM 1MBIT 12NS 32SOJ RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步,DDR II 存储容量:18M(1M x 18) 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA(13x15) 包装:托盘 其它名称:71P71804S200BQ
IDT71024S12TY8 功能描述:IC SRAM 1MBIT 12NS 32SOJ RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步,DDR II 存储容量:18M(1M x 18) 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA(13x15) 包装:托盘 其它名称:71P71804S200BQ
IDT71024S12TYG 功能描述:IC SRAM 1MBIT 12NS 32SOJ RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:4G(256M x 16) 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:48-TFSOP(0.724",18.40mm 宽) 供应商设备封装:48-TSOP I 包装:Digi-Reel® 其它名称:557-1461-6
IDT71024S12TYG8 功能描述:IC SRAM 1MBIT 12NS 32SOJ RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:256K (32K x 8) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:28-TSSOP(0.465",11.8mm 宽) 供应商设备封装:28-TSOP 包装:带卷 (TR) 其它名称:71V256SA15PZGI8
IDT71024S12TYGI 功能描述:IC SRAM 1MBIT 12NS 32SOJ RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:4.5M(256K x 18) 速度:133MHz 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x20) 包装:托盘