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| 型号： | IDT71024S25TYGI |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 6/8页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 1MBIT 25NS 32SOJ |
| 标准包装： | 23 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 异步 |
| 存储容量： | 1M (128K x 8) |
| 速度： | 25ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 32-BSOJ |
| 供应商设备封装： | 32-SOJ |
| 包装： | 管件 |
| 其它名称： | 71024S25TYGI |
IDT71024 CMOS Static RAM
1 Meg (128K x 8-Bit)
Commercial and Industrial Temperature Ranges
Timing Waveform of Write Cycle No. 1
( WE Controlled Timing) (1,4,6)
Timing Waveform of Write Cycle No. 2
( CS 1 AND CS 2 Controlled Timing) (1,4)
NOTES:
1. A write occurs during the overlap of a LOW CS 1 , HIGH CS 2 , and a LOW WE .
2. t WR is measured from the earlier of either CS 1 or WE going HIGH or CS 2 going LOW to the end of the write cycle.
3. During this period, I/O pins are in the output state, and input signals must not be applied.
4. If the CS 1 LOW transition or the CS 2 HIGH transition occurs simultaneously with or after the WE LOW transition, the outputs remain in a high impedance state. CS 1 and CS 2 must
both be active during the t CW write period.
5. Transition is measured ±200mV from steady state.
6. OE is continuously HIGH. During a WE controlled write cycle with OE LOW, t WP must be greater than or equal to t WHZ + t DW to allow the I/O drivers to turn off and data to be placed
on the bus for the required t DW . If OE is HIGH during a WE controlled write cycle, this requirement does not apply and the minimum write pulse is the specified t WP .
6.42
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| IDT71024S25TYGI8 | 功能描述:IC SRAM 1MBIT 25NS 32SOJ RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:256K (32K x 8) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:28-TSSOP（0.465"，11.8mm 宽） 供应商设备封装:28-TSOP 包装:带卷 (TR) 其它名称:71V256SA15PZGI8 |
| IDT71024S25YG | 功能描述:IC SRAM 1MBIT 25NS 32SOJ RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:4.5M（256K x 18） 速度:133MHz 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x20） 包装:托盘 |
| IDT71024S25YG8 | 功能描述:IC SRAM 1MBIT 25NS 32SOJ RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:256K (32K x 8) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:28-TSSOP（0.465"，11.8mm 宽） 供应商设备封装:28-TSOP 包装:带卷 (TR) 其它名称:71V256SA15PZGI8 |
| IDT71028S15Y | 制造商:Integrated Device Technology Inc 功能描述: |
| IDT71028SI4Y | 制造商:INT_DEV_TECH 功能描述: |
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