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| 型号： | IDT7133SA35J8 |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 14/17页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 32KBIT 35NS 68PLCC |
| 标准包装： | 250 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 32K（2K x 16） |
| 速度： | 35ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 68-LCC（J 形引线） |
| 供应商设备封装： | 68-PLCC（24x24） |
| 包装： | 带卷 (TR) |
| 其它名称： | 7133SA35J8 |
IDT7133SA/LA, IDT7143SA/LA
High-Speed 2K x 16 Dual-Port RAM
Military, Industrial and Commercial Temperature Ranges
Functional Description
The IDT7133/43 provides two ports with separate control, address
and I/O pins that permit independent access for reads or writes to any
location in memory. The IDT7133/43 has an automatic power down
feature controlled by CE . The CE controls on-chip power down circuitry
that permits the respective port to go into a standby mode when not
R/ W
BUSY
LEFT
R/ W
BUSY
IDT7133
MASTER
R/ W
BUSY
RIGHT
R/ W
BUSY
selected ( CE HIGH). When a port is enabled, access to the entire
memory array is permitted. Non-contention READ/WRITE conditions
270 ?
V CC
V CC
270 ?
are illustrated in Truth Table 1.
Busy Logic
Busy Logic provides a hardware indication that both ports of the
RAM have accessed the same location at the same time. It also allows
R/ W
BUSY
IDT7143
SLAVE
R/ W
BUSY
2746 drw 15
one of the two accesses to proceed and signals the other side that the
RAM is “busy”. The BUSY pin can then be used to stall the access until
the operation on the other side is completed. If a write operation has
been attempted from the side that receives a BUSY indication, the
write signal is gated internally to prevent the write from proceeding.
The use of BUSY logic is not required or desirable for all applica-
tions. In some cases it may be useful to logically OR the BUSY outputs
together and use any BUSY indication as an interrupt source to flag the
event of an illegal or illogical operation. If the write inhibit function of
BUSY logic is not desirable, the BUSY logic can be disabled by using
the IDT7143 (SLAVE). In the IDT7143, the BUSY pin operates solely
as a write inhibit input pin. Normal operation can be programmed by
tying the BUSY pins HIGH. If desired, unintended write operations can
be prevented to a port by tying the BUSY pin for that port LOW. The
BUSY outputs on the IDT 7133 RAM are open drain and require pull-
up resistors.
Width Expansion with Busy Logic
Master/Slave Arrays
When expanding an IDT7133/43 RAM array in width while using
BUSY logic, one master part is used to decide which side of the RAM
array will receive a BUSY indication, and to output that indication. Any
number of slaves to be addressed in the same address range as the
master, use the BUSY signal as a write inhibit signal. Thus on the
IDT7133 RAM the BUSY pin is an output and on the IDT7143 RAM, the
BUSY pin is an input (see Figure 3).
Figure 4 . Busy and chip enable routing for both width and depth expansion
with the IDT7133 (MASTER) and the IDT7143 (SLAVE).
Expanding the data bus width to 32 bits or more in a Dual-Port RAM
system implies that several chips will be active at the same time. If each
chip includes a hardware arbitrator, and the addresses for each chip
arrive at the same time, it is possible that one will activate its BUSY L
while another activates its BUSY R signal. Both sides are now BUSY
and the CPUs will await indefinitely for their port to become free.
To avoid the “Busy Lock-Out” problem, IDT has developed a
MASTER/SLAVE approach where only one hardware arbitrator, in the
MASTER, is used. The SLAVE has BUSY inputs which allow an
interface to the MASTER with no external components and with a
speed advantage over other systems.
When expanding Dual-Port RAMs in width, the writing of the SLAVE
RAMs must be delayed until after the BUSY input has settled.
Otherwise, the SLAVE chip may begin a write cycle during a contention
situation. Conversely, the write pulse must extend a hold time past
BUSY to ensure that a write cycle takes place after the contention is
resolved. This timing is inherent in all Dual-Port memory systems where
more than one chip is active at the same time.
The write pulse to the SLAVE should be delayed by the maximum
arbitration time of the MASTER. If, then, a contention occurs, the write
to the SLAVE will be inhibited due to BUSY from the MASTER.
14
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT7133SA35JG | 制造商:INTEGRATED DEVICE TECHNOLOGY 功能描述:SRAM DUAL PORT 2KX16 7133 PLCC68 制造商:INTEGRATED DEVICE TECHNOLOGY 功能描述:SRAM DUAL PORT 2KX16 7133 TUBE18 制造商:Integrated Device Technology Inc 功能描述:SRAM DUAL PORT 2KX16, 7133, PLCC68 制造商:INTEGRATED DEVICE TECHNOLOGY 功能描述:MEMORY, SRAM, 32KBIT, 35NS, PLCC-68; Memory Size:32Kbit; Memory Configuration:2K x 16; Supply Voltage Min:4.5V; Supply Voltage Max:5.5V; Memory Case Style:PLCC; No. of Pins:68; Access Time:35ns; Operating Temperature Min:0C ;RoHS Compliant: Yes |
| IDT7133SA35PF | 功能描述:IC SRAM 32KBIT 35NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M（256K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:71V67703S75PFGI |
| IDT7133SA35PF8 | 功能描述:IC SRAM 32KBIT 35NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M（256K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:71V67703S75PFGI |
| IDT7133SA35PFG | 功能描述:IC SRAM 32KBIT 35NS 100TQFP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M（256K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:71V67703S75PFGI |
| IDT7133SA35PFG8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 32KBIT 35NS 100TQFP |
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