- 您现在的位置：买卖IC网 > PDF目录4103 > IDT7133SA35J8 (IDT, Integrated Device Technology Inc)IC SRAM 32KBIT 35NS 68PLCC PDF资料下载
参数资料
| 型号： | IDT7133SA35J8 |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 4/17页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 32KBIT 35NS 68PLCC |
| 标准包装： | 250 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 32K（2K x 16） |
| 速度： | 35ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 68-LCC（J 形引线） |
| 供应商设备封装： | 68-PLCC（24x24） |
| 包装： | 带卷 (TR) |
| 其它名称： | 7133SA35J8 |
IDT7133SA/LA, IDT7143SA/LA
High-Speed 2K x 16 Dual-Port RAM
Military, Industrial and Commercial Temperature Ranges
Absolute Maximum Ratings (1)
Symbol Rating Commercial Military
& Industrial
V TERM (2) Terminal Voltage -0.5 to +7.0 -0.5 to +7.0
with Respect
to GND
Unit
V
Maximum Operating
Temperature and Supply Voltage (1,2)
Grade Ambient GND Vcc
Temperature
Military -55 O C to +125 O C 0V 5.0V + 10%
0 C to +70 C
-40 C to +85 C
T BIAS
Temperature
Under Bias
-55 to +125
-65 to +135
o
C
Commercial
Industrial
O O
O O
0V
0V
5.0V + 10%
5.0V + 10%
T STG
Storage
Temperature
-65 to +150
-65 to +150
o
C
NOTES:
1. This is the parameter T A . This is the "instant on" case temperature.
2746 tbl 04
P T
Power
Dissipation
2.0
2.0
W
I OUT DC Output 50 50 mA
Current
NOTES: 2746 tbl 02
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in
Recommended DC Operating
Conditions
Symbol Parameter Min. Typ. Max.
Unit
6.0
-0.5
the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. V TERM must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of V TERM > Vcc + 10%.
V CC
GND
V IH
V IL
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
4.5
0
2.2
(1)
5.0
0
____
____
5.5
0
(2)
0.8
V
V
V
V
Capacitance (T A = +25°C, f = 1.0mhz)
NOTES:
1. V IL (min.) = -1.5V for pulse width less than 10ns.
2746 tbl 05
Symbol
C IN
C OUT
Parameter (1)
Input Capacitance
Output Capacitance
Conditions (2)
V IN = 3dV
V OUT = 3dV
Max.
11
11
Unit
pF
pF
2. V TERM must not exceed Vcc + 10%.
NOTES:
2746 tbl 03
1. This parameter is determined by device characterization but is not production
tested.
2. 3dV references the interpolated capacitance when the input and output switch from
0V to 3V or from 3V to 0V.
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (Either port, V CC = 5.0V ± 10%)
7133SA
7143SA
7133LA
7143LA
Input Leakage Current
Symbol
|I LI |
|I LO |
V OL
V OL
V OH
Parameter
(1)
Output Leakage Current
Output Low Voltage (I/O 0 -I/O 15 )
Open Drain Output Low Voltage
( BUSY )
Output High Voltage
Test Conditions
V CC = 5.5V, V IN = 0V to V CC
CE = V IH , V OUT = 0V to V CC
I OL = 4mA
I OL = 16mA
I OH = -4mA
Min.
___
___
___
___
2.4
Max.
10
10
0.4
0.5
___
Min.
___
___
___
___
2.4
Max.
5
5
0.4
0.5
___
Unit
μA
μA
V
V
V
NOTE:
1. At Vcc < 2.0V, input leakages are undefined.
6.42
2746 tbl 06
相关PDF资料 |
PDF描述 |
|---|---|
| IDT7133LA45J8 | IC SRAM 32KBIT 45NS 68PLCC |
| IDT71V321L25JG | IC SRAM 16KBIT 25NS 52PLCC |
| IDT71V321L25J | IC SRAM 16KBIT 25NS 52PLCC |
| IDT71421LA25JI | IC SRAM 16KBIT 25NS 52PLCC |
| IDT7132LA25JI | IC SRAM 16KBIT 25NS 52PLCC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT7133SA35JG | 制造商:INTEGRATED DEVICE TECHNOLOGY 功能描述:SRAM DUAL PORT 2KX16 7133 PLCC68 制造商:INTEGRATED DEVICE TECHNOLOGY 功能描述:SRAM DUAL PORT 2KX16 7133 TUBE18 制造商:Integrated Device Technology Inc 功能描述:SRAM DUAL PORT 2KX16, 7133, PLCC68 制造商:INTEGRATED DEVICE TECHNOLOGY 功能描述:MEMORY, SRAM, 32KBIT, 35NS, PLCC-68; Memory Size:32Kbit; Memory Configuration:2K x 16; Supply Voltage Min:4.5V; Supply Voltage Max:5.5V; Memory Case Style:PLCC; No. of Pins:68; Access Time:35ns; Operating Temperature Min:0C ;RoHS Compliant: Yes |
| IDT7133SA35PF | 功能描述:IC SRAM 32KBIT 35NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M（256K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:71V67703S75PFGI |
| IDT7133SA35PF8 | 功能描述:IC SRAM 32KBIT 35NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M（256K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:71V67703S75PFGI |
| IDT7133SA35PFG | 功能描述:IC SRAM 32KBIT 35NS 100TQFP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M（256K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:71V67703S75PFGI |
| IDT7133SA35PFG8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 32KBIT 35NS 100TQFP |
发布紧急采购，3分钟左右您将得到回复。