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参数资料
| 型号： | IDT71342LA25PF8 |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 3/14页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 32KBIT 25NS 64TQFP |
| 标准包装： | 750 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 32K (4K x 8) |
| 速度： | 25ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 64-LQFP |
| 供应商设备封装： | 64-TQFP（14x14） |
| 包装： | 带卷 (TR) |
| 其它名称： | 71342LA25PF8 |
IDT71342SA/LA
High-Speed 4K x 8 Dual-Port Static RAM with Semaphore
Industrial and Commercial Temperature Ranges
Absolute Maximum Ratings (1)
Symbol Rating Commercial
& Industrial
V TERM (2) Terminal Voltage -0.5 to +7.0
with Respect
to GND
Unit
V
Maximum Operating
Temperature and Supply Voltage (1,2)
Grade Ambient GND Vcc
Temperature
Commercial 0 O C to +70 O C 0V 5.0V + 10%
C
-40 C to +85 C
T BIAS
Temperature
Under Bias
-55 to +125
o
Industrial
O O
0V
5.0V + 10%
C
T STG
P T
Storage
Temperature
Power
Dissipation
-65 to +150
1.5
o
W
NOTES:
1. This is the parameter T A . This is the "instant on" case temperature.
2721 tbl 03
I OUT DC Output 50 mA
Current
2721 tbl 01
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
Recommended DC Operating
Conditions
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. V TERM must not exceed Vcc + 10% for more than 25% of the cycle time or 10 ns
maximum, and is limited to < 20mA for the period of V TERM > Vcc +10%.
Symbol
V CC
GND
V IH
V IL
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
4.5
0
2.2
-0.5 (1)
Typ.
5.0
0
____
____
Max.
5.5
0
6.0 (2)
0.8
Unit
V
V
V
V
Capacitance (1) (T A = +25°C, f = 1.0MHz)
NOTES:
1. V IL (min.) > -1.5V for pulse width less than 10ns.
2. V TERM must not exceed Vcc + 10%.
2721 tbl 04
Symbol
C IN
C OUT
Parameter
Input Capacitance
Output Capacitance
Conditions (2)
V IN = 3dV
V OUT = 3dV
Max.
9
10
Unit
pF
pF
NOTES:
2721 tbl 02
1. This parameter is determined by device characterization but is not production
tested.
2. 3dv references the interpolated capacitance when the input and output signals
switch from 0V to 3V and from 3V to 0V.
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage (V CC = 5V ± 10%)
71342SA
71342LA
Input Leakage Current
Symbol
|I LI |
|I LO |
V OL
V OH
Parameter
(1)
Output Leakage Current
Output Low Voltage
Output High Voltage
Test Conditions
V CC = 5.5V, V IN = 0V to V CC
CE = V IH , V OUT = 0V to V CC
I OL = 6mA
I OL = 8mA
I OH = -4mA
Min.
___
___
___
___
2.4
Max.
10
10
0.4
0.5
___
Min.
___
___
___
___
2.4
Max.
5
5
0.4
0.5
___
Unit
μA
μA
V
V
V
NOTE:
1. At Vcc < 2.0V input leakages are undefined.
3
6.42
2721 tbl 05
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT71342LA25PFGI | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 32KBIT 25NS 64TQFP |
| IDT71342LA25PFGI8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 32KBIT 25NS 64TQFP |
| IDT71342LA25PFI | 功能描述:IC SRAM 32KBIT 25NS 64TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M（256K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:71V67703S75PFGI |
| IDT71342LA25PFI8 | 功能描述:IC SRAM 32KBIT 25NS 64TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M（256K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:71V67703S75PFGI |
| IDT71342LA35J | 功能描述:IC SRAM 32KBIT 35NS 52PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M（256K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:71V67703S75PFGI |
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