- 您现在的位置：买卖IC网 > PDF目录377311 > IDT7143SA90PF (INTEGRATED DEVICE TECHNOLOGY INC) HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS PDF资料下载
参数资料
| 型号： | IDT7143SA90PF |
| 厂商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分类： | DRAM |
| 英文描述： | HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS |
| 中文描述： | 2K X 16 DUAL-PORT SRAM, 90 ns, PQFP100 |
| 封装： | TQFP-100 |
| 文件页数： | 11/16页 |
| 文件大小： | 140K |
| 代理商： | IDT7143SA90PF |
6.42
IDT7133SA/LA, IDT7143SA/LA
High-Speed 2K x 16 Dual-Port RAM Military, Industrial and Commercial Temperature Ranges
NOTES:
1.
2. A write occurs during the overlap (t
EW
or t
WP
) of a
CE
= V
IL
and a R/
W
= V
IL
.
3.
t
WR
is measured fromthe earlier of
CE
or R/
W
going HIGH to the end of the write cycle.
4.
During this period, the I/O pins are in the output state, and input signals must not be applied.
5.
If the
CE
LOW transition occurs simultaneously with or after the R/
W
LOW transition, the outputs remain in the High-impedance state.
6.
Timng depends on which enable signal (
CE
or R/
W
) is asserted last.
7.
Timng depends on which enable signal is de-asserted first,
CE
or
OE
.
8. If
OE
is LOW during a R/
W
controlled write cycle, the write pulse width must be the larger of t
WP
or (t
WZ
+ t
DW
) to allow the I/O drivers to turn off and data to be placed
on the bus for the required t
DW
. If
OE
is HIGH during an R/
W
controlled write cycle, this requirement does not apply and the write pulse can be as short as the
specified t
WP
.
9. R/
W
for either upper or lower byte.
R/
W
or
CE
must be HIGH during all address transitions.
82#
CE
-$!
(!
$8582#,=
W
-$!
(>!
CE
2746 drw 09
t
AW
t
AS
t
WR
t
DW
DATA
IN
ADDRESS
t
WC
R/
W
t
WP
t
DH
DATA
OUT
t
WZ
(7)
(4)
(2)
t
OW
OE
(9)
t
LZ
(7)
t
HZ
(6)
(3)
(4)
(7)
t
HZ
CE
2746 drw 10
t
AW
t
AS
t
WR
t
DW
DATA
IN
ADDRESS
t
WC
R/
W
t
EW
t
DH
(9)
(6)
(2)
相关PDF资料 |
PDF描述 |
|---|---|
| IDT7143SA90PFB | HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS |
| IDT7143SA90PFI | HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS |
| IDT7133LA25GB | HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS |
| IDT7143LA25GB | HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS |
| IDT7133LA25GI | HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT71502L25J | 制造商:Integrated Device Technology Inc 功能描述: |
| IDT71502S35J | 制造商:Integrated Device Technology Inc 功能描述:Static RAM, 4Kx16, 52 Pin, Plastic, LDCC |
| IDT7164L100DB | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 64KBIT 100NS 28CDIP |
| IDT7164L120DB | 制造商:Integrated Device Technology Inc 功能描述: |
| IDT7164L15P | 制造商:Integrated Device Technology Inc 功能描述: |
发布紧急采购，3分钟左右您将得到回复。