参数资料
型号: IDT7164S20TPGI
厂商: IDT, Integrated Device Technology Inc
文件页数: 1/10页
文件大小: 0K
描述: IC SRAM 64KBIT 20NS 28DIP
标准包装: 280
格式 - 存储器: RAM
存储器类型: SRAM - 异步
存储容量: 64K (8K x 8)
速度: 20ns
接口: 并联
电源电压: 4.5 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 28-DIP(0.300",7.62mm)
供应商设备封装: 28-PDIP
包装: 管件
其它名称: 7164S20TPGI
CMOS Static RAM
64K (8K x 8-Bit)
IDT7164S
IDT7164L
High-speed address/chip select access time
Features
– Military: 20/25/35/45/55/70/85/100ns (max.)
– Industrial: 20/25ns (max.)
– Commercial: 20/25ns (max.)
Description
The IDT7164 is a 65,536 bit high-speed static RAM organized as 8K
x 8. It is fabricated using high-performance, high-reliability CMOS tech-
nology.
Address access times as fast as 20ns are available and the circuit offers
Low power consumption
Battery backup operation – 2V data retention voltage
(L Version only)
Produced with advanced CMOS high-performance
technology
Inputs and outputs directly TTL-compatible
Three-state outputs
Available in 28-pin DIP, CERDIP and SOJ
Military product compliant to MIL-STD-883, Class B
a reduced power standby mode. When CS 1 goes HIGH or CS 2 goes
LOW, the circuit will automatically go to, and remain in, a low-power stand-
by mode. The low-power (L) version also offers a battery backup data
retention capability at power supply levels as low as 2V.
All inputs and outputs of the IDT7164 are TTL-compatible and
operation is from a single 5V supply, simplifying system designs. Fully
static asynchronous circuitry is used, requiring no clocks or refreshing
for operation.
The IDT7164 is packaged in a 28-pin 300 mil DIP and SOJ and a 28-
pin 600 mil CERDIP.
Military grade product is manufactured in compliance with MIL-STD-
883, Class B, making it ideally suited to military temperature applications
demanding the highest level of performance and reliability.
Functional Block Diagram
A 0
V CC
A 12
ADDRESS
DECODER
0
65,536 BIT
MEMORY ARRAY
7
GND
I/O 0
I/O CONTROL
I/O 7
CS 1
CS 2
OE
WE
CONTROL
LOGIC
1
2967 drw 01
OCTOBER 2013
?2013 Integrated Device Technology, Inc.
DSC-2967/16
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IDT7164S20TPI 功能描述:IC SRAM 64KBIT 20NS 28DIP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步,DDR II 存储容量:18M(1M x 18) 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA(13x15) 包装:托盘 其它名称:71P71804S200BQ
IDT7164S20Y 功能描述:IC SRAM 64KBIT 20NS 28SOJ RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步,DDR II 存储容量:18M(1M x 18) 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA(13x15) 包装:托盘 其它名称:71P71804S200BQ
IDT7164S20Y8 功能描述:IC SRAM 64KBIT 20NS 28SOJ RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步,DDR II 存储容量:18M(1M x 18) 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA(13x15) 包装:托盘 其它名称:71P71804S200BQ
IDT7164S20YG 功能描述:IC SRAM 64KBIT 20NS 28SOJ RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:4G(256M x 16) 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:48-TFSOP(0.724",18.40mm 宽) 供应商设备封装:48-TSOP I 包装:Digi-Reel® 其它名称:557-1461-6
IDT7164S20YG8 功能描述:IC SRAM 64KBIT 20NS 28SOJ RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:4G(256M x 16) 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:48-TFSOP(0.724",18.40mm 宽) 供应商设备封装:48-TSOP I 包装:Digi-Reel® 其它名称:557-1461-6