参数资料
型号: IDT71T75602S100BG8
厂商: IDT, Integrated Device Technology Inc
文件页数: 1/23页
文件大小: 0K
描述: IC SRAM 18MBIT 100MHZ 119BGA
标准包装: 1,000
格式 - 存储器: RAM
存储器类型: SRAM - 同步 ZBT
存储容量: 18M(512K x 36)
速度: 100MHz
接口: 并联
电源电压: 2.375 V ~ 2.625 V
工作温度: 0°C ~ 70°C
封装/外壳: 119-BGA
供应商设备封装: 119-PBGA(14x22)
包装: 带卷 (TR)
其它名称: 71T75602S100BG8
512K x 36, 1M x 18
2.5V Synchronous ZBT? SRAMs
2.5V I/O, Burst Counter
Pipelined Outputs
IDT71T75602
IDT71T75802
Features
? 512K x 36, 1M x 18 memory configurations
? Supports high performance system speed - 200 MHz
(3.2 ns Clock-to-Data Access)
? ZBT TM Feature - No dead cycles between write and read
cycles
? Internally synchronized output buffer enable eliminates the
need to control OE
? Single R/ W (READ/WRITE) control pin
? Positive clock-edge triggered address, data, and control
signal registers for fully pipelined applications
? 4-word burst capability (interleaved or linear)
? Individual byte write ( BW 1 - BW 4 ) control (May tie active)
? Three chip enables for simple depth expansion
? 2.5V power supply (±5%)
? 2.5V I/O Supply (V DDQ )
? Power down controlled by ZZ input
? Boundary Scan JTAG Interface (IEEE 1149.1 Compliant)
? Packaged in a JEDEC standard 100-pin plastic thin quad
flatpack (TQFP), 119 ball grid array (BGA)
Pin Description Summary
Description
The IDT71T75602/802 are 2.5V high-speed 18,874,368-bit
(18 Megabit) synchronous SRAMs. They are designed to eliminate dead
bus cycles when turning the bus around between reads and writes, or
writes and reads. Thus, they have been given the name ZBT TM , or Zero
Bus Turnaround.
Address and control signals are applied to the SRAM during one
clock cycle, and two cycles later the associated data cycle occurs, be it
read or write.
The IDT71T75602/802 contain data I/O, address and control signal
registers. Output enable is the only asynchronous signal and can be used
to disable the outputs at any given time.
A Clock Enable CEN pin allows operation of the IDT71T75602/802
to be suspended as long as necessary. All synchronous inputs are ignored
when ( CEN ) is high and the internal device registers will hold their previous
values.
There are three chip enable pins ( CE 1 , CE 2 , CE 2 ) that allow the
user to deselect the device when desired. If any one of these three is not
asserted when ADV/ LD is low, no new memory operation can be initiated.
However, any pending data transfers (reads or writes) will be completed.
A 0 -A 19
CE 1 , CE 2 , CE 2
OE
R/ W
CEN
BW 1 , BW 2 , BW 3 , BW 4
CLK
ADV/ LD
LBO
TMS
TDI
TCK
TDO
TRST
ZZ
I/O 0 -I/O 31 , I/O P1 -I/O P4
V DD , V DDQ
V SS
Address Inputs
Chip Enables
Output Enable
Read/Write Signal
Clock Enable
Individual Byte Write Selects
Clock
Advance burst address / Load new address
Linear / Interleaved Burst Order
Test Mode Select
Test Data Input
Test Clock
Test Data Input
JTAG Reset (Optional)
Sleep Mode
Data Input / Output
Core Power, I/O Power
Ground
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Output
Input
Input
I/O
Supply
Supply
Synchronous
Synchronous
Asynchronous
Synchronous
Synchronous
Synchronous
N/A
Synchronous
Static
N/A
N/A
N/A
N/A
Asynchronous
Synchronous
Synchronous
Static
Static
5313 tbl 01
APRIL 2012
1
?2012 Integrated Device Technology, Inc.
DSC-5313/10
相关PDF资料
PDF描述
IDT71V67803S166PFG IC SRAM 9MBIT 166MHZ 100TQFP
IDT70V24L20JI8 IC SRAM 64KBIT 20NS 84PLCC
IDT70V24L15J8 IC SRAM 64KBIT 15NS 84PLCC
IDT7024L20JI8 IC SRAM 64KBIT 20NS 84PLCC
IDT7024L20JGI8 IC SRAM 64KBIT 20NS 84PLCC
相关代理商/技术参数
参数描述
IDT71T75602S100BGG 功能描述:IC SRAM 18MBIT 100MHZ 119BGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,异步 存储容量:128K(8K x 16) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x14) 包装:托盘 其它名称:70V25S15PF
IDT71T75602S100BGG8 功能描述:IC SRAM 18MBIT 100MHZ 119BGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,异步 存储容量:128K(8K x 16) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x14) 包装:托盘 其它名称:70V25S15PF
IDT71T75602S100BGGI 功能描述:IC SRAM 18MBIT 100MHZ 119BGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8
IDT71T75602S100BGGI8 功能描述:IC SRAM 18MBIT 100MHZ 119BGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,异步 存储容量:128K(8K x 16) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x14) 包装:托盘 其它名称:70V25S15PF
IDT71T75602S100BGI 功能描述:IC SRAM 18MBIT 100MHZ 119BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口,同步 存储容量:1.125M(32K x 36) 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA(17x17) 包装:带卷 (TR) 其它名称:70V3579S5BCI8