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参数资料
| 型号： | IDT71T75902S85BG8 |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 6/26页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 18MBIT 85NS 119BGA |
| 标准包装： | 1,000 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 同步 ZBT |
| 存储容量： | 18M（1M x 18） |
| 速度： | 85ns |
| 接口： | 并联 |
| 电源电压： | 2.375 V ~ 2.625 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 119-BGA |
| 供应商设备封装： | 119-PBGA（14x22） |
| 包装： | 带卷 (TR) |
| 其它名称： | 71T75902S85BG8 |
IDT71T75702, IDT71T75902, 512K x 36, 1M x 18, 2.5V Synchronous ZBT? SRAMs with
2.5V I/O, Burst Counter and Flow-Through Outputs Commercial and Industrial Temperature Ranges
Pin Configuration ? 1M x 18
Absolute Maximum Ratings (1)
Symbol
Rating
Commercial
Industrial
Unit
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
V TERM (2)
Terminal Voltage with
Respect to GND
-0.5 to +3.6
-0.5 to +3.6
V
NC
NC
NC
V DDQ
V SS
NC
NC
I/O 8
1
2
3
4
5
6
7
8
80
79
78
77
76
75
74
73
A 10
NC
NC
V DDQ
V SS
NC
I/O P1
I/O 7
V TERM (3,6)
V TERM (4,6)
V TERM (5,6)
Terminal Voltage with
Respect to GND
Terminal Voltage with
Respect to GND
Terminal Voltage with
Respect to GND
-0.5 to V DD
-0.5 to V DD +0.5
-0.5 to V DDQ +0.5
-0.5 to V DD
-0.5 to V DD +0.5
-0.5 to V DDQ +0.5
V
V
V
I/O 9
9
72
I/O 6
V SS
V DDQ
10
11
71
70
V SS
V DDQ
T A (7)
Operating Ambient
Temperature
0 to +70
-40 to +85
o
C
I/O 10
12
69
I/O 5
I/O 11
13
68
I/O 4
T BIAS
Temperature Under Bias
-55 to +125
-55 to +125
o
C
V SS (1)
14
67
V SS
V DD
15
66
V SS (1)
T STG
Storage Temperature
-55 to +125
-55 to +125
o
C
V DD (2)
16
65
V DD
V SS
I/O 12
I/O 13
17
18
19
64
63
62
ZZ
I/O 3
I/O 2
P T
I OUT
Power Dissipation
DC Output Current
2.0
50
2.0
50
W
mA
V DDQ
V SS
I/O 14
20
21
22
61
60
59
V DDQ
V SS
I/O 1
NOTES:
5319 tbl 06
I/O 15
I/O P2
NC
V SS
23
24
25
26
58
57
56
55
I/O 0
NC
NC
V SS
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
V DDQ
NC
NC
27
28
29
54
53
52
V DDQ
NC
NC
,
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
NC
30
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
51
NC
2. V DD terminals only.
5319 drw 02a
3. V DDQ terminals only.
4. Input terminals only.
5. I/O terminals only.
6. This is a steady-state DC parameter that applies after the power supply has
NOTES:
Top View
100 TQFP
reached its nominal operating value. Power sequencing is not necessary;
however, the voltage on any input or I/O pin cannot exceed V DDQ during power
supply ramp up.
7. During production testing, the case temperature equals T A .
1. Pins 14 and 66 do not have to be connected directly to V SS as long as the
input voltage is < V IL .
2. Pin 16 does not have to be connected directly to V DD as long as the input voltage
is > V IH .
3. Pins 38, 39 and 43 will be pulled internally to V DD if not actively driven. To
disable the TAP controller without interfering with normal operation, several
settings are possible. Pins 38, 39 and 43 could be tied to V DD or V SS and
pin 42 should be left unconnected. Or all JTAG inputs (TMS, TDI and TCK)
pins38, 39 and 43 could be left unconnected “NC” and the JTAG circuit will
remain disabled from power up.
fBGA Capacitance
(T A = +25 ° C, f = 1.0MHz)
4. Pin 43 is reserved for the 36M address. JTAG is not offered in the 100-pin
TQFP package for the 36M ZBT device.
TQFP Capacitance
(T A = +25 ° C, f = 1.0MHz)
Symbol
C IN
C I/O
Parameter (1)
Input Capacitance
I/O Capacitance
Conditions
V IN = 3dV
V OUT = 3dV
Max.
7
7
Unit
pF
pF
Symbol
C IN
C I/O
Parameter (1)
Input Capacitance
I/O Capacitance
Conditions
V IN = 3dV
V OUT = 3dV
Max.
5
7
Unit
pF
pF
5319 tbl 07b
BGA Capacitance
(T A = +25 ° C, f = 1.0MHz)
5319 tbl 07
Symbol
C IN
C I/O
Parameter (1)
Input Capacitance
I/O Capacitance
Conditions
V IN = 3dV
V OUT = 3dV
Max.
7
7
Unit
pF
pF
5319 tbl 07a
NOTE:
1. This parameter is guaranteed by device characterization, but not production tested.
6.42
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| IDT71T75902S85BGG | 功能描述:IC SRAM 18MBIT 85NS 119BGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
| IDT71T75902S85BGG8 | 功能描述:IC SRAM 18MBIT 85NS 119BGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，异步 存储容量:128K（8K x 16） 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:70V25S15PF |
| IDT71T75902S85BGGI | 功能描述:IC SRAM 18MBIT 85NS 119BGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 05/Nov/2008 标准包装:84 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 ZBT 存储容量:4.5M（128K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:119-BGA 供应商设备封装:119-PBGA（14x22） 包装:托盘 其它名称:71V3557SA75BGI |
| IDT71T75902S85BGGI8 | 功能描述:IC SRAM 18MBIT 85NS 119BGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 05/Nov/2008 标准包装:84 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 ZBT 存储容量:4.5M（128K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:119-BGA 供应商设备封装:119-PBGA（14x22） 包装:托盘 其它名称:71V3557SA75BGI |
| IDT71T75902S85BGI | 功能描述:IC SRAM 18MBIT 85NS 119BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 05/Nov/2008 标准包装:84 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 ZBT 存储容量:4.5M（128K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:119-BGA 供应商设备封装:119-PBGA（14x22） 包装:托盘 其它名称:71V3557SA75BGI |
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