- 您现在的位置：买卖IC网 > PDF目录4157 > IDT71V25761S200BG8 (IDT, Integrated Device Technology Inc)IC SRAM 4MBIT 200MHZ 119BGA PDF资料下载
参数资料
| 型号： | IDT71V25761S200BG8 |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 2/21页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 4MBIT 200MHZ 119BGA |
| 标准包装： | 1,000 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 同步 |
| 存储容量： | 4.5M（128K x 36） |
| 速度： | 200MHz |
| 接口： | 并联 |
| 电源电压： | 3.135 V ~ 3.465 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 119-BGA |
| 供应商设备封装： | 119-PBGA（14x22） |
| 包装： | 带卷 (TR) |
| 其它名称： | 71V25761S200BG8 |
IDT71V25761 128K x 36, 3.3V Synchronous SRAMs with
2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect
Pin Definitions (1)
Commercial and Industrial Temperature Ranges
Symbol
A 0 -A 17
Pin Function
Address Inputs
I/O
I
Active
N/A
Description
Synchronous Address inputs. The address register is triggered by a combination of the rising edge of CLK
and ADSC Low or ADSP Low and CE Low.
ADSC
Address Status
I
LOW
Synchronous Ad dress Status from Cache Controller. ADSC is an active LOW input that is used to load the
(Cache Controller)
address registers with new addresses.
ADSP
ADV
Address Status
(Processor)
Burst Address
I
I
LOW
LOW
Synchrono us Address Status from Processor. ADSP is an active LOW input that is used to load the address
registers with new addresses. ADSP is gated by CE .
Synchronous Address Advance. ADV is an active LOW input that is used to advance the internal burst
Advance
counter, controlling burst access after the initial address is loaded. When the input is HIGH the burst counter is
not incremented; that is, there is no address advance.
BWE
Byte Write Enable
I
LOW
Synchronous byte write enable gates the byte write inputs BW 1 - BW 4 . If BWE is LOW at the rising edge of CLK
then BW x inputs are passed to the next stage in the circuit. If BWE is HIGH then the byte write inputs are
blocked and only GW can initiate a write cycle.
BW 1 - BW 4
Individual Byte
I
LOW
Synchronous byte write enables. BW 1 controls I/O 0-7 , I/O P1 , BW 2 controls I/O 8-15 , I/O P2 , etc. Any active byte
Write Enables
write causes all outputs to be disabled.
CE
CLK
CS 0
CS 1
GW
I/O 0 -I/O 31
Chip Enable
Clock
Chip Select 0
Chip Select 1
Global Write
Enable
Data Input/Output
I
I
I
I
I
I/O
LOW
N/A
HIGH
LOW
LOW
N/A
Synchronous chip enable. CE is used with CS 0 and CS 1 to enable the IDT71V25761/781. CE also gates ADSP .
This is the clock input. All timing references for the device are made with respect to this input.
Synchronous active HIGH chip select. CS 0 is used with CE and CS 1 to enable the chip.
Synchronous active LOW chip select. CS 1 is used with CE and CS 0 to enable the chip.
Synchronous global write enable. This input will write all four 9-bit data bytes when LOW on the rising edge of
CLK. GW supersedes individual byte write enables.
Synchronous data input/output (I/O) pins. Both the data input path and data output path are registered and
I/O P1 -I/O P4
triggered by the rising edge of CLK.
LBO
Linear Burst Order
I
LOW
Asynchronous burst order selection input. When LBO is HIGH, the interleaved burst sequence is selected.
When LBO is LOW the Linear burst sequence is selected. LBO is a static input and must not change state
while the device is operating.
OE
Output Enable
I
LOW
Asynchronous output enable. When OE is LOW the data output drivers are enabled on the I/O pins if the chip
is also selected. When OE is HIGH the I/O pins are in a high-impedance state.
TMS
TDI
TCK
TDO
TRST
Test ModeSelect
Test Data Input
Test Clock
Test DataOutput
JTAG Reset
(Optional)
I
I
I
O
I
N/A
N/A
N/A
N/A
LOW
Gives input command for TAP controller. Sampled on rising edge of TDK. This pin has an internal pullup.
Serial input of registers placed between TDI and TDO. Sampled on rising edge of TCK. This pin has an
internal pullup.
Clock input of TAP controller. Each TAP event is clocked. Test inputs are captured o n rising edge of TCK,
while test outputs are d riven from the falling edge of TCK. This pin has an internal pullup.
Serial output of registers placed between TDI and TDO. This output is active depending on the state of the
TAP controller.
Optional Asynchronous JTAG reset. Can be used to reset the TAP co ntroller, but not required. JTAG reset
occurs automatically at power up and also resets using TMS and TCK per IEEE 1149.1. If not used TRST can
be left floating. This pin has an internal pullup. Only available in BGA package.
Asynchronous sleep mode input. ZZ HIGH will gate the CLK internally and power down the IDT71V25761/781
ZZ
Sleep Mode
I
HIGH
to its lowest power consumption level. Data retention is guaranteed in Sleep Mode.This pin has an internal
pull down.
V DD
V DDQ
V SS
NC
Power Supply
Power Supply
Ground
No Connect
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
3.3V core power supply.
2.5V I/O Supply.
Ground.
NC pins are not electrically connected to the device.
NOTE:
1. All synchronous inputs must meet specified setup and hold times with respect to CLK.
6.42
5297 tbl 02
相关PDF资料 |
PDF描述 |
|---|---|
| ACC65DRTN-S93 | CONN EDGECARD 130PS DIP .100 SLD |
| IDT71V25761S183BG8 | IC SRAM 4MBIT 183MHZ 119BGA |
| ACC65DRTH-S93 | CONN EDGECARD 130PS DIP .100 SLD |
| IDT71V25761S166BG8 | IC SRAM 4MBIT 166MHZ 119BGA |
| AMC31DRAN-S734 | CONN EDGECARD 62POS .100 R/A PCB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT71V25761S200PF | 功能描述:IC SRAM 4MBIT 200MHZ 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 05/Nov/2008 标准包装:84 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 ZBT 存储容量:4.5M（128K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:119-BGA 供应商设备封装:119-PBGA（14x22） 包装:托盘 其它名称:71V3557SA75BGI |
| IDT71V25761S200PF8 | 功能描述:IC SRAM 4MBIT 200MHZ 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 05/Nov/2008 标准包装:84 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 ZBT 存储容量:4.5M（128K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:119-BGA 供应商设备封装:119-PBGA（14x22） 包装:托盘 其它名称:71V3557SA75BGI |
| IDT71V25761S200PFG | 功能描述:IC SRAM 4MBIT 200MHZ 100TQFP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:MoBL® 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并联 电源电压:2.2 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-VFBGA 供应商设备封装:48-VFBGA（6x8） 包装:带卷 (TR) |
| IDT71V25761S200PFG8 | 功能描述:IC SRAM 4MBIT 200MHZ 100TQFP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:MoBL® 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并联 电源电压:2.2 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-VFBGA 供应商设备封装:48-VFBGA（6x8） 包装:带卷 (TR) |
| IDT71V25761S200PFGI | 功能描述:IC SRAM 4MBIT 200MHZ 100TQFP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:MoBL® 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并联 电源电压:2.2 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-VFBGA 供应商设备封装:48-VFBGA（6x8） 包装:带卷 (TR) |
发布紧急采购，3分钟左右您将得到回复。