参数资料
型号: IDT71V35761SA183BG8
厂商: IDT, Integrated Device Technology Inc
文件页数: 19/21页
文件大小: 0K
描述: IC SRAM 4MBIT 183MHZ 119BGA
标准包装: 1,000
格式 - 存储器: RAM
存储器类型: SRAM - 同步
存储容量: 4.5M(128K x 36)
速度: 183MHz
接口: 并联
电源电压: 3.135 V ~ 3.465 V
工作温度: 0°C ~ 70°C
封装/外壳: 119-BGA
供应商设备封装: 119-PBGA(14x22)
包装: 带卷 (TR)
其它名称: 71V35761SA183BG8
IDT71V35761, 128K x 36, 3.3V Synchronous SRAMs with
3.3V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
JTAG Identification Register Definitions (SA Version only)
Instruction Field
Revision Number (31:28)
IDT Device ID (27:12)
IDT JEDEC ID (11:1)
ID Register Indicator Bit (Bit 0)
Value
0x2
0x23C, 0x23E
0x33
1
Description
Reserved for version number.
Defines IDT part number 71V35761SA and 71V35781SA, respectively.
Allows unique identification of device vendor as IDT.
Indicates the presence of an ID register.
I5301 tbl 02
Available JTAG Instructions
Instruction
EXTEST
SAMPLE/PRELOAD
DEVICE_ID
HIGHZ
RESERVED
RESERVED
RESERVED
RESERVED
CLAMP
RESERVED
RESERVED
RESERVED
RESERVED
VALIDATE
RESERVED
BYPASS
Description
Forces contents of the boundary scan cells onto the device outputs (1) .
Places the boundary scan register (BSR) between TDI and TDO.
Places the boundary scan register (BSR) between TDI and TDO.
SAMPLE allows data from device inputs (2) and outputs (1) to be captured
in the boundary scan cells and shifted serially through TDO. PRELOAD
allows data to be input serially into the boundary scan cells via the TDI.
Loads the JTAG ID register (JIDR) with the vendor ID code and places
the register between TDI and TDO.
Places the bypass register (BYR) between TDI and TDO. Forces all
device o utput drivers to a High-Z state.
Several combinations are reserved. Do not use codes other than those
identified for EXTEST, SAMPLE/PRELOAD, DEVICE_ID, HIGHZ, CLAMP,
VALIDATE and BYPASS instructions.
Uses BYR. Forces contents of the boundary scan cells onto the device
outputs. Places the byp ass registe r (BYR) between TDI and TDO.
Same as above.
Automatically loaded into the instruction register whenever the TAP
controller passes through the CAPTURE-IR state. The lower two bits '01'
are mand ated by the IEEE std. 1149.1 specification.
Same as above.
The BYPASS instruction is used to truncate the boundary scan register
as a single bit in length.
OPCODE
0000
0001
0010
0011
0100
0101
0110
0111
1000
1001
1010
1011
1100
1101
1110
1111
I5301 tbl 04
NOTES:
1. Device outputs = All device outputs except TDO.
2. Device inputs = All device inputs except TDI, TMS, and TRST .
19
6.42
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IDT71V35761SA183BGG 功能描述:IC SRAM 4MBIT 183MHZ 119BGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:MoBL® 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:16M(2M x 8,1M x 16) 速度:45ns 接口:并联 电源电压:2.2 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-VFBGA 供应商设备封装:48-VFBGA(6x8) 包装:带卷 (TR)
IDT71V35761SA183BGG8 功能描述:IC SRAM 4MBIT 183MHZ 119BGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:MoBL® 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:16M(2M x 8,1M x 16) 速度:45ns 接口:并联 电源电压:2.2 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-VFBGA 供应商设备封装:48-VFBGA(6x8) 包装:带卷 (TR)
IDT71V35761SA183BGGI 功能描述:IC SRAM 4MBIT 183MHZ 119BGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:MoBL® 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:16M(2M x 8,1M x 16) 速度:45ns 接口:并联 电源电压:2.2 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-VFBGA 供应商设备封装:48-VFBGA(6x8) 包装:带卷 (TR)
IDT71V35761SA183BGGI8 功能描述:IC SRAM 4MBIT 183MHZ 119BGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:MoBL® 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:16M(2M x 8,1M x 16) 速度:45ns 接口:并联 电源电压:2.2 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-VFBGA 供应商设备封装:48-VFBGA(6x8) 包装:带卷 (TR)
IDT71V35761SA183BGI 功能描述:IC SRAM 4MBIT 183MHZ 119BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:MoBL® 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:16M(2M x 8,1M x 16) 速度:45ns 接口:并联 电源电压:2.2 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-VFBGA 供应商设备封装:48-VFBGA(6x8) 包装:带卷 (TR)