参数资料
型号: IDT71V416L12PHGI
厂商: IDT, Integrated Device Technology Inc
文件页数: 3/9页
文件大小: 0K
描述: IC SRAM 4MBIT 12NS 44TSOP
标准包装: 26
格式 - 存储器: RAM
存储器类型: SRAM - 异步
存储容量: 4M (256K x 16)
速度: 12ns
接口: 并联
电源电压: 3 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 44-TSOP(0.400",10.16mm 宽)
供应商设备封装: 44-TSOP II
包装: 管件
其它名称: 71V416L12PHGI
IDT71V416L12PHGI-ND
IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM
4 Meg (256K x 16-Bit)
Commercial and Industrial Temperature Ranges
Absolute Maximum Ratings (1)
Symbol Rating Value
Unit
Recommended Operating
Temperature and Supply
Voltage
C
–40 C to +85 C
V DD
V IN, V OUT
T BIAS
Supply Voltage Relative to V SS
Terminal Voltage Relative to
V SS
Temperature Under Bias
-0.5 to +4.6
-0.5 to V DD +0.5
-55 to +125
V
V
o
Grade
Commercial
Industrial
Temperature
0 O C to +70 O C
O O
V SS
0V
0V
V DD
See Below
See Below
C
T STG
P T
I OUT
Storage Temperature
Power Dissipation
DC Output Current
-55 to +125
1
50
o
W
mA
3624 tbl 04
Recommended DC Operating
Conditions
3624 tbl 05
V DD +0.3
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
Symbol
V DD
V SS
V IH
V IL
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
3.0
0
2.0
-0.3 (2)
Typ.
3.3
0
____
____
Max.
3.6
0
0.8
(1)
Unit
V
V
V
V
NOTES:
3624 tbl 06
1. VIH (max.) = VDD+2V for pulse width less than 5ns, once per cycle.
2. VIL (min.) = –2V for pulse width less than 5ns, once per cycle.
Truth Table (1)
CS
H
L
L
L
L
L
L
L
L
OE
X
L
L
L
X
X
X
H
X
WE
X
H
H
H
L
L
L
H
X
BLE
X
L
H
L
L
L
H
X
H
BHE
X
H
L
L
L
H
L
X
H
I/O 0- I/O 7
High-Z
DATA OUT
High-Z
DATA OUT
DATA IN
DATA IN
High-Z
High-Z
High-Z
I/O 8- I/O 15
High-Z
High-Z
DATA OUT
DATA OUT
DATA IN
High-Z
DATA IN
High-Z
High-Z
Function
Deselected - Standby
Low Byte Read
High Byte Read
Word Read
Word Write
Low Byte Write
High Byte Write
Outputs Disabled
Outputs Disabled
NOTE:
1. H = V IH , L = V IL , X = Don't care.
3
6.42
3624 tbl 03
相关PDF资料
PDF描述
AFS090-FG256I IC FPGA 2MB FLASH 90K 256FBGA
AFS090-FGG256I IC FPGA 2MB FLASH 90K 256FBGA
A42MX09-PQ100A IC FPGA MX SGL CHIP 14K 100-PQFP
A42MX09-PQG100A IC FPGA MX SGL CHIP 14K 100-PQFP
M1A3P1000L-1PQG208 IC FPGA M1 1KB FLASH 1M 208PQFP
相关代理商/技术参数
参数描述
IDT71V416L12PHGI8 功能描述:IC SRAM 4MBIT 12NS 44TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:4.5M(256K x 18) 速度:133MHz 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x20) 包装:托盘
IDT71V416L12PHI 功能描述:IC SRAM 4MBIT 12NS 44TSOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:576 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:512M(64M x 8) 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP(0.724",18.40mm 宽) 供应商设备封装:48-TSOP 包装:托盘 其它名称:497-5040
IDT71V416L12PHI8 功能描述:IC SRAM 4MBIT 12NS 44TSOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:576 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:512M(64M x 8) 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP(0.724",18.40mm 宽) 供应商设备封装:48-TSOP 包装:托盘 其它名称:497-5040
IDT71V416L12Y 功能描述:IC SRAM 4MBIT 12NS 44SOJ RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:576 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:512M(64M x 8) 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP(0.724",18.40mm 宽) 供应商设备封装:48-TSOP 包装:托盘 其它名称:497-5040
IDT71V416L12Y8 功能描述:IC SRAM 4MBIT 12NS 44SOJ RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:576 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:512M(64M x 8) 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP(0.724",18.40mm 宽) 供应商设备封装:48-TSOP 包装:托盘 其它名称:497-5040