参数资料
型号: IDT7205S35TP
厂商: INTEGRATED DEVICE TECHNOLOGY INC
元件分类: DRAM
英文描述: CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9
中文描述: 8K X 9 OTHER FIFO, 35 ns, PDIP28
封装: 0.300 INCH, THIN, PLASTIC, DIP-28
文件页数: 3/14页
文件大小: 147K
代理商: IDT7205S35TP
5.04
3
IDT7203/7204/7205/7206 CMOS ASYNCHRONOUS FIFO
2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS FOR THE 7205 AND 7206
(Commercial: V
CC
= 5.0V
±
10%, T
A
= 0
°
C to +70
°
C; Military: V
CC
= 5.0V
±
10%, T
A
= –55
°
C to +125
°
C)
IDT7205/7206
Commercial
t
A
= 15, 20, 25, 35, 50 ns
Min.
Typ.
–1
–10
2.4
IDT7205/7206
Military
t
A
= 20, 30, 50 ns
Typ.
Symbol
I
LI(1)
I
LO(2)
V
OH
V
OL
I
CC1(3)
I
CC2(3)
I
CC3
(L)
(3)
NOTES:
1. Measurements with 0.4
V
IN
V
CC
.
2. R
V
IH
, 0.4
V
OUT
V
CC
.
3. I
CC
measurements are made with outputs open (only capacitive loading).
4. Tested at f = 20MHz.
Parameter
Max.
1
10
0.4
120
(4)
12
8
Min.
–1
–10
2.4
Max.
1
10
0.4
150
(4)
25
12
Unit
μ
A
μ
A
V
V
mA
mA
mA
Input Leakage Current (Any Input)
Output Leakage Current
Output Logic “1” Voltage I
OH
= –2mA
Output Logic “0” Voltage I
OL
= 8mA
Active Power Supply Current
Standby Current (
R
=
W
=
RS
=
FL
/
RT
=V
IH
)
Power Down Current (All Input = V
CC
- 0.2V)
DC ELECTRICAL CHARACTERISTICS FOR THE 7203 AND 7204
(Commercial: V
CC
= 5.0V
±
10%, T
A
= 0
°
C to +70
°
C; Military: V
CC
= 5.0V
±
10%, T
A
= –55
°
C to +125
°
C)
IDT7203/7204
Commercial
IDT7203/7204
Military
(1)
t
A
= 12, 15, 20, 25, 35, 50 ns
Min.
Typ.
–1
–10
2.4
t
A
= 20, 30, 40, 50, 65, 80, 120 ns
Min.
Typ.
–1
–10
2.4
Symbol
I
LI(2)
I
LO(3)
V
OH
V
OL
I
CC1(4)
I
CC2(4)
I
CC3
(L)
(4)
I
CC3
(S)
(4)
Parameter
Max.
1
10
0.4
120
(5)
12
2
8
Max.
1
10
0.4
150
(5)
25
4
12
Unit
μ
A
μ
A
V
V
mA
mA
mA
mA
Input Leakage Current (Any Input)
Output Leakage Current
Output Logic “1” Voltage I
OH
= –2mA
Output Logic “0” Voltage I
OL
= 8mA
Active Power Supply Current
Standby Current (
R
=
W
=
RS
=
FL
/
RT
=V
IH
)
Power Down Current (All Input = V
CC
- 0.2V)
Power Down Current (All Input = V
CC
- 0.2V)
NOTES:
1. Speed grades 65, 80, and 120ns are only available in the ceramic DIP.
2. Measurements with 0.4
V
IN
V
CC
.
3. R
V
IH
, 0.4
V
OUT
V
CC
.
4. I
CC
measurements are made with outputs open (only capacitive loading).
5. Tested at f = 20MHz.
2661 tbl 03
2661 tbl 04
相关PDF资料
PDF描述
IDT7205S35TPB CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9
IDT7205S50D CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9
IDT7205S50DB CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9
IDT7205S50J CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9
IDT7205S50JB CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9
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