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参数资料
| 型号： | IGB15N60T |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Low Loss IGBT in Trench and Fieldstop technology |
| 中文描述： | 在戴低损失和场终止IGBT技术 |
| 文件页数： | 3/12页 |
| 文件大小： | 364K |
| 代理商： | IGB15N60T |
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
TrenchStop Series
IGB15N60T
q
Power Semiconductors
3
Rev. 2.1 Dec-04
Value
Typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Switching Characteristic, Inductive Load,
at
T
j
=175
°
C
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
17
11
188
50
0.22
0.35
0.57
-
-
-
-
-
-
-
ns
T
j
=25
°
C,
V
CC
=400V,
I
C
=15A,
V
GE
=0 /15V,
R
G
=15
,
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
2)
1)
=154nH,
1)
=39pF
mJ
Value
Typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
17
15
212
79
0.34
0.47
0.81
-
-
-
-
-
-
-
ns
T
j
=175
°
C,
V
CC
=400V,
I
C
=15A,
V
GE
=0/15V,
R
G
= 15
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
1)
=154nH,
1)
=39pF
mJ
1)
Leakage inductance
L
σ
and Stray capacity
C
σ
due to dynamic test circuit in Figure E.
2)
Includes Reverse Recovery Losses from IKW30N60T due to dynamic test circuit in Figure E.
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IGB15N60TATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 30A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT 600V 15A 130W TO263-3-2 |
| IGB20N60H3 | 功能描述:IGBT 晶体管 600v Hi-Speed SW IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IGB20N60H3ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 40A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:IGBT 600V 20A 170W TO263-3 |
| IGB2B | 制造商:SPACE AGE ELECTRONICS 功能描述:IGB BACKBOX 2 GANG BLACK / SURFACE 4-5/8 X 4-5/8 X 2DP |
| IGB30N60H3 | 功能描述:IGBT 晶体管 600v Hi-Speed SW IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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