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参数资料
| 型号： | IGP01N120H2 |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | HighSpeed 2-Technology |
| 中文描述： | 高速2 -技术 |
| 文件页数： | 2/13页 |
| 文件大小： | 390K |
| 代理商： | IGP01N120H2 |
IGP01N120H2,
IGD01N120H2
IGB01N120H2
Power Semiconductors
2
Rev. 2, Mar-04
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
SMD version, device on PCB
1)
Electrical Characteristic,
at
T
j
= 25
°
C, unless otherwise specified
R
thJC
4.5
R
thJA
P-TO-220-3-1
62
40
R
thJA
P-TO-263 (D
2
PAK)
K/W
Value
Typ.
Parameter
Symbol
Conditions
min.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
V
(BR)CES
V
CE(sat)
V
GE
=0V,
I
C
=300
μ
A
V
GE
= 15V,
I
C
=1A
T
j
=25
°
C
T
j
=150
°
C
V
GE
= 10V,
I
C
=1A,
T
j
=25
°
C
1200
-
-
Collector-emitter saturation voltage
-
-
-
2.2
2.5
2.4
3
2.8
-
-
3.9
Gate-emitter threshold voltage
V
GE(th)
I
CES
I
C
=30
μ
A,
V
CE
=
V
GE
V
CE
=1200V,
V
GE
=0V
T
j
=25
°
C
T
j
=150
°
C
V
CE
=0V,
V
GE
=20V
V
CE
=20V,
I
C
=1A
2.1
V
Zero gate voltage collector current
-
-
-
-
20
80
μ
A
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
I
GES
g
fs
-
-
-
40
-
nA
S
0.75
C
iss
C
oss
C
rss
Q
Gate
-
-
-
-
91.6
9.8
3.4
8.6
-
-
-
-
V
CE
=25V,
V
GE
=0V,
f
=1MHz
pF
V
CC
=960V,
I
C
=1A
V
GE
=15V
P-TO-220-3-1
P-TO-247-3-1
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
L
E
-
7
13
-
nH
1)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70
μ
m thick) copper area for
collector connection. PCB is vertical without blown air.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IGP01N120H2_07 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HighSpeed 2-Technology |
| IGP01N120H2XKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 3.2A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 3.2A 28W TO220-3 |
| IGP03N120H2 | 功能描述:IGBT 晶体管 HIGH SPEED 2 TECH 1200V 3A RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IGP03N120H2_08 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HighSpeed 2-Technology |
| IGP03N120H2XKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 9.6A 3-Pin(3+Tab) TO-220 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 9.6A 62.5W TO220-3 |
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