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| 型号： | IGP01N120H2 |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | HighSpeed 2-Technology |
| 中文描述： | 高速2 -技术 |
| 文件页数： | 8/13页 |
| 文件大小： | 390K |
| 代理商： | IGP01N120H2 |
IGP01N120H2,
IGD01N120H2
IGB01N120H2
Power Semiconductors
8
Rev. 2, Mar-04
Z
t
,
T
1μs
10μs
100μs
1ms
10ms
100ms
10
-2
K/W
10
-1
K/W
10
0
K/W
0.01
0.02
0.05
0.1
0.2
single pulse
D
=0.5
V
G
,
G
-
E
0nC
5nC
10nC
15nC
0V
5V
10V
15V
20V
U
CE
=240V
U
CE
=960V
t
p
,
PULSE WIDTH
Q
GE
,
GATE CHARGE
Figure 17. IGBT transient thermal
impedance as a function of pulse width
(
D
=
t
p
/
T
)
Figure 18. Typical gate charge
(
I
C
= 1A)
C
,
C
0V
10V
20V
30V
10pF
100pF
C
rss
C
oss
C
iss
V
C
,
C
-
E
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0V
200V
400V
600V
800V
1000V
0.0A
0.2A
0.4A
0.6A
0.8A
1.0A
I
C
C
C
U
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 19. Typical capacitance as a
function of collector-emitter voltage
(
V
GE
= 0V,
f
= 1MHz)
t
p
,
PULSE WIDTH
Figure 20. Typical turn off behavior, hard
switching
(V
GE
=15/0V,
R
G
=220
,
T
j
= 150
°
C,
Dynamic test circuit in Figure E)
R
,(K/W )
2.5069
1.1603
0.8327
τ
,
(s)
0.00066
0.00021
0.00426
C
1
=
τ
1
/
R
1
R
1
R
2
C
2
=
τ
2
/
R
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IGP01N120H2_07 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HighSpeed 2-Technology |
| IGP01N120H2XKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 3.2A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 3.2A 28W TO220-3 |
| IGP03N120H2 | 功能描述:IGBT 晶体管 HIGH SPEED 2 TECH 1200V 3A RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IGP03N120H2_08 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:HighSpeed 2-Technology |
| IGP03N120H2XKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 9.6A 3-Pin(3+Tab) TO-220 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 9.6A 62.5W TO220-3 |
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