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| 型号： | IGW25T120 |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 47uF; Voltage: 100V; Case Size: 10x12.5 mm; Packaging: Bulk |
| 中文描述： | 在戴低损失和场终止IGBT技术 |
| 文件页数： | 7/12页 |
| 文件大小： | 412K |
| 代理商： | IGW25T120 |
IGW25T120
^
TrenchStop Series
Power Semiconductors
7
Preliminary / Rev. 1 Jul-02
E
,
S
10A
20A
30A
40A
0,0mJ
2,0mJ
4,0mJ
6,0mJ
8,0mJ
10,0mJ
12,0mJ
14,0mJ
E
ts
*
E
off
*)
E
on
and
E
ts
include losses
due to diode recovery
E
on
*
E
,
S
5
15
R
G
,
GATE RESISTOR
25
35
0 mJ
2 mJ
4 mJ
6 mJ
8 mJ
E
ts
*
E
on
*
*)
E
on
and
E
ts
include losses
due to diode recovery
E
off
I
C
,
COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
J
=150°C,
V
CE
=600V, V
GE
=0/15V,
R
G
=22
,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
J
=150°C,
V
CE
=600V, V
GE
=0/15V,
I
C
=25A,
Dynamic test circuit in Figure E)
E
,
S
50°C
T
J
,
JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load,
V
CE
=600V,
V
GE
=0/15V,
I
C
=25A,
R
G
=22
,
Dynamic test circuit in Figure E)
100°C
150°C
0mJ
1mJ
2mJ
3mJ
4mJ
5mJ
6mJ
7mJ
E
ts
*
E
on
*
*)
E
on
and
E
ts
include losses
due to diode recovery
E
off
E
,
S
400V
500V
600V
700V
800V
0mJ
1mJ
2mJ
3mJ
4mJ
5mJ
6mJ
7mJ
8mJ
9mJ
10mJ
E
ts
*
E
on
*
*)
E
on
and
E
ts
include losses
due to diode recovery
E
off
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load,
T
J
=150°C,
V
GE
=0/15V,
I
C
=25A,
R
G
=22
,
Dynamic test circuit in Figure E)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IGW25T120_09 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:Low Loss IGBT in TrenchStop? and Fieldstop technology |
| IGW25T120FKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 50A 190W TO247-3 |
| IGW25T120XK | 制造商:Infineon Technologies 功能描述:Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 |
| IGW30N100T | 功能描述:IGBT 晶体管 LoLoss IGBT TrnchStp Fieldstop tech RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IGW30N100TFKSA1 | 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube |
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