Document Number: 83617
www.vishay.com
Revision 17-August-01
2–117
FEATURES
High Current Transfer Ratio, IF=1.0 mA,
IL221AT, 100% Minimum
IL222AT, 200% Minimum
IL223AT, 500% Minimum
Withstand Test Voltage, 3000 VRMS
Electrical Specications Similar to
Standard 6 Pin Coupler
Industry Standard SOIC-8 Surface
Mountable Package
Standard Lead Spacing, .05"
Available only on Tape and Reel Option
(Conforms to EIA Standard RS481A)
Compatible with Dual Wave, Vapor Phase
and IR Reow Soldering
Underwriters Lab File #E52744
(Code Letter Y)
VDE 0884 Available with Option 1
DESCRIPTION
The IL221AT/IL222AT/IL223AT is a high current
transfer ratio (CTR) optocoupler with a Gallium
Arsenide infrared LED emitter and a silicon NPN
photodarlington transistor detector.
This device has a CTR tested at an 1.0 mA LED
current. This low drive current permits easy inter-
facing from CMOS to LSTTL or TTL.
This optocoupler is constructed in a standard
SOIC-8 foot print which makes it ideally suited for
high density applications. In addition to eliminating
through-holes requirements, this package con-
forms to standards for surface mounted devices.
Maximum Ratings
Emitter
Peak Reverse Voltage .................................. 6.0 V
Continuous Forward Current ...................... 60 mA
Power Dissipation at 25
°C ........................ 90 mW
Derate Linearly from 25
°C................... 1.2 mW/°C
Detector
Collector-Emitter Breakdown Voltage ........... 30 V
Emitter-Collector Breakdown Voltage .......... 5.0 V
Collector-Base Breakdown Voltage .............. 70 V
ICMAX DC .....................................................50 mA
ICMAX (t<1.0 ms) ...................................... 100 mA
Power Dissipation .................................. 150 mW
Derate Linearly from 25
°C................... 2.0 mW/°C
Package
Total Package Dissipation at 25
°C Ambient
(LED + Detector) ................................. 240 mW
Derate Linearly from 25
°C................... 3.2 mW/°C
Storage Temperature ............... –55
°C to +150°C
Operating Temperature ............ –55
°C to +100°C
Soldering Time at 260
°C...........................10 sec.
V
DE
Characteristics TA=25°C
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
Emitter
Forward Voltage
VF
—
1.0
1.5
V
IF=1.0 mA
Reverse Current
IR
—
0.1
100
A
VR=6.0 V
Capacitance
CO
—25
—
pF
VR=0 V,
F=1.0 MHz
Detector
Breakdown Voltage
BVCEO
30
—
V
IC=100 A
BVECO
5.0
—
V
IE=100 A
Voltage,
Collector-Base
BVCBO
70
—
V
IC=10 A
Capacitance,
Collector-Emitter
CCE
—
3.4
—
pF
VCE=10 V
Package
DC
Current
Transfer
Ratio
IL221A
CTRDC
100
—
IF=1.0 mA,
VCE=5.0 V
IL222A
200
—
IL223A
500
—
Saturation Voltage,
Collector-Emitter
VCEsat
—
1.0
V
ICE=0.5 mA,
IF=1.0 mA
Isolation Test
Voltage
VIO
3000
—
VRMS
t=1.0 sec.
Capacitance,
Input to Output
CIO
—
0.5
—
pF
—
Resistance,
Input to Output
RIO
—
100
—
G
—
1
2
3
4
Anode
Cathode
NC
8
7
6
5
NC
Base
Collector
Emitter
40
°
.240
(6.10)
.154
±.005
(3.91
±.13)
.050 (1.27)
typ.
.016 (.41)
.192
±.005
(4.88
±.13)
.004 (.10)
.008 (.20)
Lead
Coplanarity
±.0015 (.04)
max.
.015
±.002
(.38
±.05)
.008 (.20)
7
°
.058
±.005
(1.49
±.13)
.125
±.005
(3.18
±.13)
Pin One ID
.120
±.005
(3.05
±.13)
CL
.040 (1.02)
5
° max.
R.010
(.25) max.
.020
±.004
(.15
±.10)
2 plcs.
Dimensions in inches (mm)
IL221AT/IL222AT/IL223AT
Photodarlington
Small Outline Surface Mount
Optocoupler