
ILD620, ILD620GB, ILQ620, ILQ620GB
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 09-Jun-11
2
Document Number: 83653
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
INPUT
Forward current
IF
± 60
mA
Surge current
IFSM
± 1.5
A
Power dissipation
Pdiss
100
mW
Derate linearly from 25 °C
1.3
mW/°C
OUTPUT
Collector emitter breakdown voltage
BVCEO
70
V
Collector current
IC
50
mA
t < 1 s
IC
100
mA
Power dissipation
Pdiss
150
mW
Derate from 25 °C
2mW/°C
COUPLER
Isolation test voltage
t = 1 s
VISO
5300
VRMS
Isolation voltage
VIORM
890
VP
Total power dissipation
Ptot
250
mW
Package dissipation
ILD620
400
mW
ILD620GB
400
mW
Derate from 25 °C
5.33
mW/°C
Package dissipation
ILQ620
500
mW
ILQ620GB
500
mW
Derate from 25 °C
6.67
mW/°C
Creepage distance
7mm
Clearance distance
7mm
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
1012
VIO = 500 V, Tamb = 100 °C
RIO
1011
Storage temperature
Tstg
- 55 to + 150
°C
Operating temperature
Tamb
- 55 to + 100
°C
Junction temperature
Tj
100
°C
Soldering temperature (1)
2 mm from case bottom
Tsld
260
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = ± 10 mA
VF
1
1.15
1.3
V
Forward current
VR = ± 0.7 V
IF
2.5
20
μA
Capacitance
VF = 0 V, f = 1 MHz
CO
25
pF
Thermal resistance, junction to lead
RthJL
750
K/W
OUTPUT
Collector emitter capacitance
VCE = 5 V, f = 1 MHz
CCE
6.8
pF
Collector emitter leakage current
VCE = 24 V
ICEO
10
100
nA
TA = 85 °C, VCE = 24 V
ICEO
250
μA
Thermal resistance, junction to lead
RthJL
500
K/W