
ILD620, ILD620GB, ILQ620, ILQ620GB
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Vishay Semiconductors
Rev. 1.7, 09-Jun-11
3
Document Number: 83653
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Note
According to DIN EN 60747-5-2 (VDE 0884) (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety
ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
COUPLER
Off-state collector current
VF = ± 0.7 V, VCE = 24 V
ICEoff
110
μA
Collector emitter saturation voltage
IF = ± 8 mA, ICE = 2.4 mA
ILD620
VCEsat
0.4
V
ILQ620
VCEsat
0.4
V
IF = ± 1 mA, ICE = 0.2 mA
ILD620GB
VCEsat
0.4
V
ILQ620GB
VCEsat
0.4
V
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Channel/channel CTR match
IF = ± 5 mA, VCE = 5 V
CTRX/CTRY
1 to 1
3 to 1
CTR symmetry
ICE (IF = - 5 mA)/ICE (IF = + 5 mA)
ICE(RATIO)
0.5
2
Current transfer ratio
(collector emitter saturated)
IF = ± 1 mA, VCE = 0.4 V
ILD620
CTRCEsat
60
%
ILQ620
CTRCEsat
60
%
Current transfer ratio
(collector emitter)
IF = ± 5 mA, VCE = 5 V
ILD620
CTRCE
50
80
600
%
ILQ620
CTRCE
50
80
600
%
Current transfer ratio
(collector emitter saturated)
IF = ± 1 mA, VCE = 0.4 V
ILD620GB
CTRCEsat
30
%
ILQ620GB
CTRCEsat
30
%
Current transfer ratio
(collector emitter)
IF = ± 5 mA, VCE = 5 V
ILD620GB
CTRCEsat
100
200
600
%
ILQ620GB
CTRCEsat
100
200
600
%
SAFETY AND INSULATION RATED PARAMETERS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Partial discharge test voltage -
routine test
100 %, ttest = 1 s
Vpd
1.669
kV
Partial discharge test voltage -
lot test (sample test)
tTr = 60 s, ttest = 10 s,
(see figure 2)
VIOTM
10
kV
Vpd
1.424
kV
Insulation resistance
VIO = 500 V
RIO
1012
VIO = 500 V, Tamb = 100 °C
RIO
1011
VIO = 500 V, Tamb 150 °C
(construction test only)
RIO
109
Forward current
Isi
275
mA
Power dissipation
PSO
400
mW
Rated impulse voltage
VIOTM
10
kV
Safety temperature
Tsi
175
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT