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参数资料
| 型号： | IN74LV573D |
| 厂商： | INTEGRAL JOINT STOCK COMPANY |
| 元件分类： | DRAM |
| 英文描述： | Replaced by SN74ABT7819A : 512 x 18 x 2 bidirectional synchronous FIFO memory 80-QFP 0 to 70 |
| 中文描述： | 八路D型透明锁存器（3态） |
| 文件页数： | 2/5页 |
| 文件大小： | 156K |
| 代理商： | IN74LV573D |
IN74LV573
2
ABSOLUTE MAXIMUM RATINGS
Symb
ol
Vcc
Supply voltage
Iik,
Input diode current
Parameter
Rating
Uni
t
V
mA V
I
<-0.5 V
V
I
>Vcc>+0.5 V
mA V
0
<-0.5 V
V
I
>Vcc>+0.5 V
mA -0.5 V<Vo<Vcc+0.5 V
mA
Conditions
-0.5 to +7.0
±
20
or
Iok
Output diode current
±
50
or
Io
Icc
Output current bus drivers
DC Vcc or GND current for
types
bus driver outputs
GND current
Storage temperature range
Power dissipation per package:
±
35
±
70
I
GND
Tstg
P
D
±
50
m
А
о
С
mW
-65 to +150
750
500
DIP
SO
Notes:
Power dissipation value decreases for:
DIP - 12 mW
°
C the range from 70 to 125
°
С
SO - 8 mW
°
C the range from 70 to 125
°
С
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Vcc
Supply voltage
VI
Input voltage
V
о
Output voltage
T
Operating temperature range
t
r
,t
f
Input rise and fall times
Min
1.0
0
0
-40
Max
5.5
Vcc
Vcc
+125
500
200
100
50
Unit
V
V
V
o
C
ns/V
Conditions
Vcc= 1.0
÷
2.0 V
Vcc= 2.0
÷
2.7 V
Vcc= 2.7
÷
3.6 V
Vcc= 3.6
÷
5.5 V
- The IC function down to V
сс
= 1.0 V (input levels - V
IL
=0 V, V
IH
=Vcc); DC characterisics
are guaranteed at Vcc=1.2
÷
5.5 V.
相关PDF资料 |
PDF描述 |
|---|---|
| IN74LV573N | Replaced by SN74ABT7819A : 512 x 18 x 2 bidirectional synchronous FIFO memory 80-LQFP 0 to 70 |
| IN74LV574DW | Octal D-type flip-flop; positive edge-trigger (3-State) |
| IN74LV574N | Octal D-type flip-flop; positive edge-trigger (3-State) |
| IN74LV574 | Replaced by SN74ABT7819A : 512 x 18 x 2 bidirectional synchronous FIFO memory 80-QFP 0 to 70 |
| IN74LV640 | Octal 3-State Inverting Bus Transceiver |
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