参数资料
型号: IN74LV573N
厂商: INTEGRAL JOINT STOCK COMPANY
元件分类: DRAM
英文描述: Replaced by SN74ABT7819A : 512 x 18 x 2 bidirectional synchronous FIFO memory 80-LQFP 0 to 70
中文描述: 八路D型透明锁存器(3态)
文件页数: 4/5页
文件大小: 156K
代理商: IN74LV573N
IN74LV573
4
AC CHARACTERISICS
(C
L
=50 pF, R
L
=1 K
, t
LH
= t
HL
= 2.5 ns)
Sym
Conditions
bol
Parameter
Vcc
t
PHL/PLH
Propagation
delay Dn to
Qn
2.7
3.0
4.5
t
PHL/PLH
Propagation
delay LE to
Qn
2.7
3.0
4.5
t
PZH/PZL
3-state
output
enable time
OE to Qn
3.0
4.5
t
PHZ/PLZ
3-state
outpiut
disable time
OE to Qn
3.0
4.5
t
W
LE
pulse
width HIGH
2.0
2.7
3.0
4.5
t
su
Setup
time
Dn to LE
2.0
2.7
3.0
4.5
t
h
Hold time Dn
to LE
2.0
2.7
3.0
4.5
C
I
Input
capacitance
C
PD
Power
dissipation
capacitance
per package
Limits
+85
°
C
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
125
34
25
20
18
75
17
13
10
8
40
8
8
8
8
-40 to +25
°
C
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
100
29
21
17
15
50
15
11
8
6
40
8
8
8
8
+125
°
C
Unit
ns
Max
150
30
23
18
15
160
34
28
20
17
140
28
22
17
14
160
31
23
20
17
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
7.0
Max Min Max
160
39
29
23
19
-
180
43
31
25
21
-
160
37
28
22
18
-
160
39
29
24
20
-
-
-
-
-
-
21
-
-
-
-
-
10
-
-
-
-
-
8
1.2
2.0
V
I
= Vcc or
GND
-
-
-
-
170
49
36
29
24
190
53
34
31
26
170
48
35
28
23
170
48
36
29
24
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.2
2.0
V
I
= Vcc or
GND
-
-
-
-
ns
1.2
2.0
2.7
V
I
= Vcc or
GND
-
-
-
-
ns
1.2
2.0
2.7
V
I
= Vcc or
GND
-
-
-
-
ns
1.2
150
41
30
24
ns
1.2
100
20
15
12
ns
1.2
40
8
8
8
ns
5.0
Т
=+25
о
С
ns
5.5
Т
=+25
V
I
= Vcc or
GND
о
С
52
-
ns
相关PDF资料
PDF描述
IN74LV574DW Octal D-type flip-flop; positive edge-trigger (3-State)
IN74LV574N Octal D-type flip-flop; positive edge-trigger (3-State)
IN74LV574 Replaced by SN74ABT7819A : 512 x 18 x 2 bidirectional synchronous FIFO memory 80-QFP 0 to 70
IN74LV640 Octal 3-State Inverting Bus Transceiver
IN74LV640D Octal 3-State Inverting Bus Transceiver
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