参数资料
型号: IP82C83H
厂商: HARRIS SEMICONDUCTOR
元件分类: 通用总线功能
英文描述: CMOS Octal Latching Inverting Bus Driver
中文描述: CMOS SERIES, 8-BIT DRIVER, INVERTED OUTPUT, PDIP20
文件页数: 3/6页
文件大小: 105K
代理商: IP82C83H
4-283
Absolute Maximum Ratings
Thermal Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+8.0V
Input, Output or I/O Voltage . . . . . . . . . . . . GND 0.5V to V
CC
+0.5V
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Operating Conditions
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range
C82C83H . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0
o
C to +70
o
C
I82C83H . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40
o
C to +85
o
C
M82C83H . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Thermal Resistance (Typical)
CERDIP Package . . . . . . . . . . . . . . . .
CLCC Package . . . . . . . . . . . . . . . . . .
PDIP Package . . . . . . . . . . . . . . . . . . .
PLCC Package . . . . . . . . . . . . . . . . . .
Storage Temperature Range. . . . . . . . . . . . . . . . . .-65
o
C to +150
o
C
Max Junction Temperature Ceramic Package . . . . . . . . . . . . . . +175
o
C
Max Junction Temperature Plastic Package. . . . . . . . . . . . . . . . +150
o
C
Lead Temperature (Soldering 10s) (PLCC - Lead Tips Only) . . +300
o
C
θ
JAo
C/W
70
80
75
75
θ
JCo
C/W
16
20
N/A
N/A
Die Characteristics
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .265 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
DC Electrical Specifications
V
CC
= 5.0V
±
10%; T
A
= 0
o
C to +70
o
C (C82C83H);
T
A
= -40
o
C to +85
o
C (I82C83H);
T
A
= -55
o
C to +125
o
C (M82C83H)
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITIONS
V
IH
Logical One Input Voltage
2.0
2.2
-
V
C82C83H, I82C83H,
M82C83H, (Note 1)
V
IL
Logical Zero Input Voltage
0.8
V
V
OH
Logical One Output Voltage
3.0
V
CC
-0.4V
-
V
I
OH
= -8mA,
I
OH
= -100mA, OE = GND
V
OL
Logical Zero Output Voltage
0.45
V
I
OL
= 20mA, OE = GND
I
I
Input Leakage Current
-10
10
μ
A
V
IN
= GND or V
CC
,
DIP Pins 1-9,11
I
O
Output Leakage Current
-10
10
μ
A
V
O
= GND or OE
V
CC
-0.5V
DIP Pins 12-19
lCCSB
Standby Power Supply Current
-
10
μ
A
V
IN
= V
CC
or GND
V
CC
= 5.5V Outputs Open
IC COP
Operating Power Supply Current
-
1
mA/
MHz
T
A
= +25
o
C, V
CC
= 5V, Typical
(See Note 2)
NOTES:
1. V
IH
is measured by applying a pulse of magnitude = V
lHMIN
to one data Input at a time and checking the corresponding device output for
a valid logical 1 - during valid input high time. Control pins (STB, CE) are tested separately with all device data input pins at V
CC
-0.4V.
2. Typical ICCOP = 1 mA/MHz of STB cycle time. (Example: 5MHz
μ
P, ALE = 1.25MHz, ICCOP = 1.25mA).
Capacitance
T
A
= +25
o
C
SYMBOL
PARAMETER
TYPICAL
UNITS
TEST CONDITIONS
C
IN
Input Capacitance
13
pF
FREQ = 1MHz, all measure-
ments are referenced to device
GND
C
OUT
Output Capacitance
20
pF
82C83H
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