参数资料
型号: IPA60R199CP
厂商: INFINEON TECHNOLOGIES AG
英文描述: CoolMOS Power Transistor
中文描述: 的CoolMOS功率晶体管
文件页数: 1/10页
文件大小: 275K
代理商: IPA60R199CP
IPA60R199CP
CoolMOS
TM
Power Transistor
Features
Lowest figure-of-merit R
ON
xQ
g
Ultra low gate charge
Extreme dv/dt rated
High peak current capability
Qualified according to JEDEC
1)
for target applications
Pb-free lead plating; RoHS compliant
CoolMOS CP is specially designed for:
Hard switching SMPS topologies
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
2)
I
D
T
C
=25 °C
A
T
C
=100 °C
Pulsed drain current
3)
I
D,pulse
T
C
=25 °C
Avalanche energy, single pulse
E
AS
I
D
=6.6 A,
V
DD
=50 V
436
mJ
Avalanche energy, repetitive
t
AR
3),4)
E
AR
I
D
=6.6 A,
V
DD
=50 V
Avalanche current, repetitive
t
AR
3),4)
I
AR
A
MOSFET d
v
/d
t
ruggedness
d
v
/d
t
V
DS
=0...480 V
V/ns
Gate source voltage
V
GS
static
V
AC (
f
>1 Hz)
Power dissipation
P
tot
T
C
=25 °C
W
Operating and storage temperature
T
j
,
T
stg
°C
Mounting torque
M2.5 screws
50
Ncm
±30
34
-55 ... 150
0.66
6.6
50
±20
Value
16
10
51
V
DS
@
T
j,max
650
V
R
DS(on),max
0.199
Q
g,typ
33
nC
Product Summary
Type
Package
Ordering Code
Marking
IPA60R199CP
PG-TO220-3-31 SP000094146
6R199P
PG-TO220-3-31
Rev. 1.3
page 1
2005-12-22
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相关代理商/技术参数
参数描述
IPA60R199CP_08 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:CoolMos Power Transistor
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IPA60R280C6 功能描述:MOSFET COOL MOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube