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参数资料
| 型号： | IPP03N03LA |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS 2 Power-Transistor |
| 中文描述： | 的OptiMOS 2功率晶体管 |
| 文件页数： | 1/10页 |
| 文件大小： | 317K |
| 代理商： | IPP03N03LA |
IPB03N03LA
IPI03N03LA, IPP03N03LA
Opti
MOS
2 Power-Transistor
Features
Ideal for high-frequency dc/dc converters
N-channel
Logic level
Excellent gate charge x
R
DS(on)
product (FOM)
Very low on-resistance
R
DS(on)
Superior thermal resistance
175 °C operating temperature
d
v
/d
t
rated
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
I
D
T
C
=25 °C
1)
80
A
T
C
=100 °C
80
Pulsed drain current
I
D,pulse
T
C
=25 °C
2)
385
Avalanche energy, single pulse
E
AS
I
D
=80 A,
R
GS
=25
960
mJ
Reverse diode d
v
/d
t
d
v
/d
t
I
D
=80 A,
V
DS
=20 V,
d
i
/d
t
=200 A/μs,
T
j,max
=175 °C
6
kV/μs
Gate source voltage
3)
V
GS
±20
V
Power dissipation
P
tot
T
C
=25 °C
150
W
Operating and storage temperature
T
j
,
T
stg
-55 ... 175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
Value
V
DS
25
V
R
DS(on),max
(SMD version)
2.7
m
I
D
80
A
Product Summary
Type
Package
Ordering Code
Marking
IPB03N03LA
P-TO263-3-2
Q67042-S4178
03N03LA
IPI03N03LA
P-TO262-3-1
Q67042-S4180
03N03LA
IPP03N03LA
P-TO220-3-1
Q67042-S4179
03N03LA
P-TO220-3-1
P-TO262-3-1
P-TO263-3-2
Rev. 1.3
page 1
2003-12-18
相关PDF资料 |
PDF描述 |
|---|---|
| IPB03N03LB | OptiMOS㈢2 Power-Transistor |
| IPB048N06L | OptiMOS㈢ Power-Transistor |
| IPB048N06LG | OptiMOS㈢ Power-Transistor |
| IPB04N03LAG | OptiMOS㈢2 Power-Transistor |
| IPB04N03LA | Circular Connector; No. of Contacts:10; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:12-10 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IPP03N03LAXK | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 25V 80A 3-Pin(3+Tab) TO-220AB |
| IPP03N03LB | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS㈢2 Power-Transistor |
| IPP03N03LB G | 功能描述:MOSFET N-CH 30V 80A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPP03N03LBG | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS㈢2 Power-Transistor |
| IPP03N03LBG_08 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS2 Power-Transistor |
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