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参数资料
| 型号： | IPP03N03LA |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS 2 Power-Transistor |
| 中文描述： | 的OptiMOS 2功率晶体管 |
| 文件页数： | 3/10页 |
| 文件大小： | 317K |
| 代理商： | IPP03N03LA |
IPB03N03LA
IPI03N03LA, IPP03N03LA
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
C
iss
-
5283
7027
pF
Output capacitance
C
oss
-
2231
2967
Reverse transfer capacitance
C
rss
-
304
457
Turn-on delay time
t
d(on)
-
18
26
ns
Rise time
t
r
-
8.5
13
Turn-off delay time
t
d(off)
-
45
68
Fall time
t
f
-
7.5
11
Gate Charge Characteristics
5)
Gate to source charge
Q
gs
-
16
21
nC
Gate charge at threshold
Q
g(th)
-
8.5
11.2
Gate to drain charge
Q
gd
-
12
18
Switching charge
Q
sw
-
20
28
Gate charge total
Q
g
-
43
57
Gate plateau voltage
V
plateau
-
3.1
-
V
Gate charge total, sync. FET
Q
g(sync)
V
DS
=0.1 V,
V
GS
=0 to 5 V
-
37
49
nC
Output charge
Q
oss
V
DD
=15 V,
V
GS
=0 V
-
48
64
Reverse Diode
Diode continous forward current
I
S
-
-
80
A
Diode pulse current
I
S,pulse
-
-
385
Diode forward voltage
V
SD
V
GS
=0 V,
I
F
=80 A,
T
j
=25 °C
-
0.96
1.2
V
Reverse recovery charge
Q
rr
V
R
=15 V,
I
F
=
I
S
,
d
i
F
/d
t
=400 A/μs
-
-
20
nC
5)
See figure 16 for gate charge parameter definition
T
C
=25 °C
Values
V
GS
=0 V,
V
DS
=15 V,
f
=1 MHz
V
DD
=15 V,
V
GS
=10 V,
I
D
=20 A,
R
G
=2.7
V
DD
=15 V,
I
D
=40 A,
V
GS
=0 to 5 V
Rev. 1.3
page 3
2003-12-18
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PDF描述 |
|---|---|
| IPB03N03LB | OptiMOS㈢2 Power-Transistor |
| IPB048N06L | OptiMOS㈢ Power-Transistor |
| IPB048N06LG | OptiMOS㈢ Power-Transistor |
| IPB04N03LAG | OptiMOS㈢2 Power-Transistor |
| IPB04N03LA | Circular Connector; No. of Contacts:10; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:12-10 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IPP03N03LAXK | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 25V 80A 3-Pin(3+Tab) TO-220AB |
| IPP03N03LB | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS㈢2 Power-Transistor |
| IPP03N03LB G | 功能描述:MOSFET N-CH 30V 80A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPP03N03LBG | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS㈢2 Power-Transistor |
| IPP03N03LBG_08 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS2 Power-Transistor |
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