- 您现在的位置：买卖IC网 > PDF目录383110 > IPB04N03LA (INFINEON TECHNOLOGIES AG) Circular Connector; No. of Contacts:10; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:12-10 PDF资料下载
参数资料
| 型号： | IPB04N03LA |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 元件分类： | 圆形连接器 |
| 英文描述： | Circular Connector; No. of Contacts:10; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:12-10 |
| 中文描述： | 的OptiMOS 2功率晶体管 |
| 文件页数： | 1/10页 |
| 文件大小： | 348K |
| 代理商： | IPB04N03LA |
IPB04N03LA
IPI04N03LA, IPP04N03LA
Opti
MOS
2 Power-Transistor
Features
Ideal for high-frequency dc/dc converters
Qualified according to JEDEC
1)
for target applications
N-channel - Logic level
Excellent gate charge x
R
DS(on)
product (FOM)
Very low on-resistance
R
DS(on)
Superior thermal resistance
175 °C operating temperature
d
v
/d
t
rated
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
I
D
T
C
=25 °C
2)
80
A
T
C
=100 °C
80
Pulsed drain current
I
D,pulse
T
C
=25 °C
3)
385
Avalanche energy, single pulse
E
AS
I
D
=77 A,
R
GS
=25
290
mJ
Reverse diode d
v
/d
t
d
v
/d
t
I
D
=80 A,
V
DS
=20 V,
d
i
/d
t
=200 A/μs,
T
j,max
=175 °C
6
kV/μs
Gate source voltage
4)
V
GS
±20
V
Power dissipation
P
tot
T
C
=25 °C
107
W
Operating and storage temperature
T
j
,
T
stg
-55 ... 175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
1)
J-STD20 and JESD22
Value
V
DS
25
V
R
DS(on),max
(SMD version)
3.9
m
I
D
80
A
Product Summary
Type
Package
Ordering Code
Marking
IPB04N03LA
P-TO263-3-2
Q67042-S4181
04N03LA
IPI04N03LA
P-TO262-3-1
Q67042-S4183
04N03LA
IPP04N03LA
P-TO220-3-1
Q67042-S4182
04N03LA
P-TO220-3-1
P-TO262-3-1
P-TO263-3-2
Rev. 1.4
page 1
2004-03-15
相关PDF资料 |
PDF描述 |
|---|---|
| IPB04N03LB | OptiMOS㈢2 Power-Transistor |
| IPB050N06L | OptiMOS㈢ Power-Transistor |
| IPB050N06LG | OptiMOS㈢ Power-Transistor |
| IPB050N06NG | OptiMOS㈢ Power-Transistor |
| IPB051NE8NG | OptiMOS㈢2 Power-Transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IPB04N03LA G | 功能描述:MOSFET N-CH 25V 80A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPB04N03LAG | 功能描述:MOSFET N-CH 25 V 80 A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPB04N03LAGATMA1 | 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 25V 80A TO-263 |
| IPB04N03LAGXT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 25V 80A 3-Pin(2+Tab) TO-263 |
| IPB04N03LANT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 25V 80A 3-Pin(2+Tab) TO-263 |
发布紧急采购，3分钟左右您将得到回复。