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参数资料
| 型号： | IPB04N03LA |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 元件分类： | 圆形连接器 |
| 英文描述： | Circular Connector; No. of Contacts:10; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:12-10 |
| 中文描述： | 的OptiMOS 2功率晶体管 |
| 文件页数： | 2/10页 |
| 文件大小： | 348K |
| 代理商： | IPB04N03LA |
IPB04N03LA
IPI04N03LA, IPP04N03LA
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
-
-
1.4
K/W
SMD version, device on PCB
R
thJA
minimal footprint
-
-
62
6 cm
2
cooling area
5)
-
-
40
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
25
-
-
V
Gate threshold voltage
V
GS(th)
V
DS
=
V
GS
,
I
D
=60 μA
1.2
1.6
2
Zero gate voltage drain current
I
DSS
V
DS
=25 V,
V
GS
=0 V,
T
j
=25 °C
-
0.1
1
μA
V
DS
=25 V,
V
GS
=0 V,
T
j
=125 °C
-
10
100
Gate-source leakage current
I
GSS
V
GS
=20 V,
V
DS
=0 V
-
10
100
nA
Drain-source on-state resistance
R
DS(on)
V
GS
=4.5 V,
I
D
=55 A
-
5.4
6.7
m
V
GS
=4.5 V,
I
D
=55 A,
SMD version
-
5.1
6.4
V
GS
=10 V,
I
D
=55 A
-
3.5
4.2
V
GS
=10 V,
I
D
=55 A,
SMD version
-
3.2
3.9
Gate resistance
R
G
-
1.1
-
Transconductance
g
fs
|
V
DS
|>2|
I
D
|
R
DS(on)max
,
I
D
=55 A
43
85
-
S
5)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 μm thick) copper area for drain
connection. PCB is vertical in still air.
Values
2)
Current is limited by bondwire; with an
R
thJC
=1.4 K/W the chip is able to carry 125 A.
3)
See figure 3
4)
T
j,max
=150 °C and duty cycle
D
<0.25 for
V
GS
<-5 V
Rev. 1.4
page 2
2004-03-15
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IPB04N03LA G | 功能描述:MOSFET N-CH 25V 80A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPB04N03LAG | 功能描述:MOSFET N-CH 25 V 80 A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPB04N03LAGATMA1 | 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 25V 80A TO-263 |
| IPB04N03LAGXT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 25V 80A 3-Pin(2+Tab) TO-263 |
| IPB04N03LANT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 25V 80A 3-Pin(2+Tab) TO-263 |
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