参数资料
型号: IPB04N03LA
厂商: INFINEON TECHNOLOGIES AG
元件分类: 圆形连接器
英文描述: Circular Connector; No. of Contacts:10; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:12-10
中文描述: 的OptiMOS 2功率晶体管
文件页数: 3/10页
文件大小: 348K
代理商: IPB04N03LA
IPB04N03LA
IPI04N03LA, IPP04N03LA
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
C
iss
-
2915
3877
pF
Output capacitance
C
oss
-
1236
1643
Reverse transfer capacitance
C
rss
-
175
263
Turn-on delay time
t
d(on)
-
13
19
ns
Rise time
t
r
-
4.5
7.0
Turn-off delay time
t
d(off)
-
38
57
Fall time
t
f
-
5.4
8.1
Gate Charge Characteristics
6)
Gate to source charge
Q
gs
-
10
13
nC
Gate charge at threshold
Q
g(th)
-
4.6
6.2
Gate to drain charge
Q
gd
-
7.2
11
Switching charge
Q
sw
-
12
17
Gate charge total
Q
g
-
24
32
Gate plateau voltage
V
plateau
-
3.3
-
V
Gate charge total, sync. FET
Q
g(sync)
V
DS
=0.1 V,
V
GS
=0 to 5 V
-
20
27
nC
Output charge
Q
oss
V
DD
=15 V,
V
GS
=0 V
-
27
35
Reverse Diode
Diode continous forward current
I
S
-
-
80
A
Diode pulse current
I
S,pulse
-
-
385
Diode forward voltage
V
SD
V
GS
=0 V,
I
F
=80 A,
T
j
=25 °C
-
0.96
1.2
V
Reverse recovery charge
Q
rr
V
R
=15 V,
I
F
=
I
S
,
d
i
F
/d
t
=400 A/μs
-
-
15
nC
6)
See figure 16 for gate charge parameter definition
T
C
=25 °C
Values
V
GS
=0 V,
V
DS
=15 V,
f
=1 MHz
V
DD
=15 V,
V
GS
=10 V,
I
D
=20 A,
R
G
=2.7
V
DD
=15 V,
I
D
=40 A,
V
GS
=0 to 5 V
Rev. 1.4
page 3
2004-03-15
相关PDF资料
PDF描述
IPB04N03LB OptiMOS㈢2 Power-Transistor
IPB050N06L OptiMOS㈢ Power-Transistor
IPB050N06LG OptiMOS㈢ Power-Transistor
IPB050N06NG OptiMOS㈢ Power-Transistor
IPB051NE8NG OptiMOS㈢2 Power-Transistor
相关代理商/技术参数
参数描述
IPB04N03LA G 功能描述:MOSFET N-CH 25V 80A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IPB04N03LAG 功能描述:MOSFET N-CH 25 V 80 A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IPB04N03LAGATMA1 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 25V 80A TO-263
IPB04N03LAGXT 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 25V 80A 3-Pin(2+Tab) TO-263
IPB04N03LANT 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 25V 80A 3-Pin(2+Tab) TO-263