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参数资料
| 型号： | IPB03N03LB |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS㈢2 Power-Transistor |
| 中文描述： | 的OptiMOS㈢2功率晶体管 |
| 文件页数： | 2/9页 |
| 文件大小： | 291K |
| 代理商： | IPB03N03LB |
IPB03N03LB
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
-
-
1
K/W
SMD version, device on PCB
R
thJA
minimal footprint
-
-
62
6 cm
2
cooling area
5)
-
-
40
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
30
-
-
V
Gate threshold voltage
V
GS(th)
V
DS
=
V
GS
,
I
D
=100 μA
1.2
1.6
2
Zero gate voltage drain current
I
DSS
V
DS
=30 V,
V
GS
=0 V,
T
j
=25 °C
-
0.1
1
μA
V
DS
=30 V,
V
GS
=0 V,
T
j
=125 °C
-
10
100
Gate-source leakage current
I
GSS
V
GS
=20 V,
V
DS
=0 V
-
10
100
nA
Drain-source on-state resistance
R
DS(on)
V
GS
=4.5 V,
I
D
=55 A
-
3.2
3.9
m
V
GS
=10 V,
I
D
=55 A
-
2.3
2.8
Gate resistance
R
G
-
0.9
-
Transconductance
g
fs
|
V
DS
|>2|
I
D
|
R
DS(on)max
,
I
D
=60 A
139
-
S
4)
T
j,max
=150 °C and duty cycle
D
<0.25 for
V
GS
<-5 V
5)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 μm thick) copper area for drain
connection. PCB is vertical in still air.
5
Diagrams are related to straight lead versions.
Values
2)
Current is limited by bondwire; with an
R
thJC
=1 K/W the chip is able to carry 173 A.
3)
See figure 3
Rev. 0.94
page 2
2006-05-10
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IPB03N03LB G | 功能描述:MOSFET N-CH 30V 80A TO-263 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:OptiMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IPB03N03LBG | 功能描述:MOSFET N-Channel MOSFET 20-200V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPB03N03LBGXT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) TO-263 |
| IPB041N04N G | 功能描述:MOSFET OptiMOS 3 PWR TRANS 40V 80A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPB041N04NG | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS?3 Power-Transistor |
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