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参数资料
| 型号： | IPB05N03LB |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS㈢2 Power-Transistor |
| 中文描述： | 的OptiMOS㈢2功率晶体管 |
| 文件页数： | 1/9页 |
| 文件大小： | 291K |
| 代理商： | IPB05N03LB |
IPB05N03LB
Opti
MOS
2 Power-Transistor
Features
Ideal for high-frequency dc/dc converters
Qualified according to JEDEC
1)
for target application
N-channel - Logic level
Excellent gate charge x
R
DS(on)
product (FOM)
Very low on-resistance
R
DS(on)
Superior thermal resistance
175 °C operating temperature
d
v
/d
t
rated
Pb-free lead plating; RoHS compliant
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
I
D
T
C
=25 °C
2)
80
A
T
C
=100 °C
72
Pulsed drain current
I
D,pulse
T
C
=25 °C
3)
320
Avalanche energy, single pulse
E
AS
I
D
=80 A,
R
GS
=25
136
mJ
Reverse diode d
v
/d
t
d
v
/d
t
I
D
=80 A,
V
DS
=20 V,
d
i
/d
t
=200 A/μs,
T
j,max
=175 °C
6
kV/μs
Gate source voltage
4)
V
GS
±20
V
Power dissipation
P
tot
T
C
=25 °C
94
W
Operating and storage temperature
T
j
,
T
stg
-55 ... 175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
1)
J-STD20 and JESD22
Value
V
DS
30
V
R
DS(on),max
5.0
m
I
D
80
A
Product Summary
PG-TO220-3-1
PG-TO263-3
Type
Package
Marking
IPB05N03LB
PG-TO263-3
05N03LB
Rev. 0.94
page 1
2006-05-10
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IPB05N03LB G | 功能描述:MOSFET N-CH 30V 80A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPB05N03LBGXT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) TO-263 |
| IPB05N03LBNT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) TO-263 |
| IPB063N06LGXT | 制造商:Infineon Technologies AG 功能描述:GREEN, N-KANAL POWER MOS |
| IPB065N03L G | 功能描述:MOSFET N-CH 60V 80A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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