- 您现在的位置：买卖IC网 > PDF目录384485 > IPB80CN10NG (INFINEON TECHNOLOGIES AG) OptiMOS㈢2 Power-Transistor PDF资料下载
参数资料
| 型号： | IPB80CN10NG |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS㈢2 Power-Transistor |
| 中文描述： | 的OptiMOS㈢2功率晶体管 |
| 文件页数： | 13/13页 |
| 文件大小： | 708K |
| 代理商： | IPB80CN10NG |
IPB80CN10N G IPD78CN10N G
IPI80CN10N G IPP80CN10N G IPU78CN10N G
Infineon Technologies AG 2006.
All Rights Reserved.
Published by
Infineon Technologies AG
81726 München, Germany
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (
www.infineon.com
).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
Rev. 1.01
page 13
2006-06-02
相关PDF资料 |
PDF描述 |
|---|---|
| IPD78CN10NG | OptiMOS㈢2 Power-Transistor |
| IPB80N04S2-04 | OptiMOS㈢ Power-Transistor |
| IPB80N04S2-H4 | OptiMOS㈢ Power-Transistor |
| IPBH6N03LAG | OptiMOS㈢2 Power-Transistor |
| IPD03N03LAG | OptiMOS㈢2 Power-Transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IPB80N03S4L02 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPB80N03S4L-02 | 功能描述:MOSFET OPTIMOS-T2 PWR-TRANS 30V 80A 2.4mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPB80N03S4L02ATMA1 | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) TO-263 制造商:Infineon Technologies AG 功能描述:MOSFET - Tape and Reel 制造商:Infineon Technologies AG 功能描述:MOSFET N-CH 30V 80A TO263-3 |
| IPB80N03S4L03 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPB80N03S4L-03 | 功能描述:MOSFET OPTIMOS-T2 POWER-TRANS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。