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参数资料
| 型号： | IPD03N03LAG |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS㈢2 Power-Transistor |
| 中文描述： | 的OptiMOS㈢2功率晶体管 |
| 文件页数： | 3/10页 |
| 文件大小： | 335K |
| 代理商： | IPD03N03LAG |
IPD03N03LA G IPS03N03LA G
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
Input capacitance
C
iss
-
3900
5200
pF
Output capacitance
C
oss
-
1500
2000
Reverse transfer capacitance
C
rss
-
170
260
Turn-on delay time
t
d(on)
-
13
19
ns
Rise time
t
r
-
10
15
Turn-off delay time
t
d(off)
-
42
62
Fall time
t
f
-
6.6
10
Gate Charge Characteristics
6)
Gate to source charge
Q
gs
-
12
17
nC
Gate charge at threshold
Q
g(th)
-
6.3
8.3
Gate to drain charge
Q
gd
-
8.6
13
Switching charge
Q
sw
-
15
21
Gate charge total
Q
g
-
31
41
Gate plateau voltage
V
plateau
-
3.2
-
V
Gate charge total, sync. FET
Q
g(sync)
V
DS
=0.1 V,
V
GS
=0 to 5 V
-
28
37
nC
Output charge
Q
oss
V
DD
=15 V,
V
GS
=0 V
-
32
43
Reverse Diode
Diode continous forward current
I
S
-
-
90
A
Diode pulse current
I
S,pulse
-
-
360
Diode forward voltage
V
SD
V
GS
=0 V,
I
F
=90 A,
T
j
=25 °C
-
0.92
1.2
V
Reverse recovery charge
Q
rr
V
R
=15 V,
I
F
=
I
S
,
d
i
F
/d
t
=400 A/μs
-
-
20
nC
6)
See figure 16 for gate charge parameter definition
T
C
=25 °C
Values
V
GS
=0 V,
V
DS
=15 V,
f
=1 MHz
V
DD
=15 V,
V
GS
=10 V,
I
D
=25 A,
R
G
=2.7
V
DD
=15 V,
I
D
=45 A,
V
GS
=0 to 5 V
Rev. 1.2
page 3
2006-05-11
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IPD03N03LAGXT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 25V 90A 3-Pin(2+Tab) TO-252 |
| IPD03N03LB | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS 2 Power-Transistor |
| IPD03N03LB G | 功能描述:MOSFET N-CH 30V 90A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IPD03N03LBG | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:OptiMOS 2 Power-Transistor |
| IPD03N03LBGXT | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) TO-252 |
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