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参数资料
| 型号： | IPD05N03LBG |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS㈢2 Power-Transistor |
| 中文描述： | 的OptiMOS㈢2功率晶体管 |
| 文件页数： | 4/10页 |
| 文件大小： | 334K |
| 代理商： | IPD05N03LBG |
IPD05N03LB G IPS05N03LB G
1 Power dissipation
2 Drain current
P
tot
=f(
T
C
)
I
D
=f(
T
C
);
V
GS
≥
10 V
3 Safe operating area
4 Max. transient thermal impedance
I
D
=f(
V
DS
);
T
C
=25 °C;
D
=0
Z
thJC
=f(
t
p
)
parameter:
t
p
parameter:
D
=
t
p
/
T
1 μs
10 μs
100 μs
1 ms
10 ms
DC
1
10
100
1000
0.1
1
10
100
V
DS
[V]
I
D
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10
-6
10
-5
10
-4
10
-3
t
p
[s]
10
-2
10
-1
10
0
0.001
0.01
0.1
1
10
0
0
0
0
0
0
1
Z
t
0
20
40
60
80
100
120
0
50
100
150
200
T
C
[°C]
P
t
0
20
40
60
80
100
0
50
100
150
200
T
C
[°C]
I
D
Rev. 1.6
page 4
2006-05-11
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